Datasheet > IRFB4510

IRFB4510

更新时间： 2023-12-06 20:11:00

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	218K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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IRFB4510 数据手册

PD - 97772

IRFB4510PbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

V_DSS

R_DS(on)typ.

100V

10.7m

max. 13.5m

l Hard Switched and High Frequency Circuits

I_{D (Silicon Limited)}

62A

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

TO-220AB

IRFB4510PbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Parameter

Max.

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Pulsed Drain Current

250

P_D@T_C= 25°C

140

Maximum Power Dissipation

Linear Derating Factor

0.95

W/°C

V_GS

± 20

Gate-to-Source Voltage

3.2

Peak Diode Recovery

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

130

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

1.05

–––

Units

R_θ

Junction-to-Case

R_θ

0.50

–––

°C/W

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient, TO-220

www.irf.com

4/10/12

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