Datasheet > IRFB4332

IRFB4332

更新时间： 2024-11-25 11:14:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	528K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRFB4332 数据手册

PDP SWITCH

IRFB4332PbF

HEXFET^®Power MOSFET

Key Parameters

250

Feature



Advanced Process Technology

Key Parameters Optimized for PDP Sustain, Energy

Recovery and Pass Switch Applications

Low E_PULSERating to Reduce Power Dissipation in PDP

Sustain, Energy Recovery and Pass Switch Applications

Low Q_Gfor Fast Response

V_DSmin

V_{DS(Avalanche)}typ.

300



_DS(on)typ. @ 10V

m



T_Jmax

175

°C

High Repetitive Peak Current Capability for Reliable

Operation



Short Fall & Rise Times for Fast Switching

175°C Operating Junction Temperature for Improved

Ruggedness



Repetitive Avalanche Capability for Robustness and

Reliability

TO-220AB

IRFB4332PbF

Gate

Drain

Source

Standard Pack

Base part number

IRFB4332PbF

Package Type

Orderable Part Number

Form

Quantity

TO-220

Tube

IRFB4332PbF

Description

This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in

Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon

area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high

repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable

device for PDP driving applications.

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_GS

Gate-to-Source Voltage

± 30

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current 

230

_RP@ T_C= 100°C

Repetitive Peak Current 

Maximum Power Dissipation

Linear Derating Factor

120

P_D@T_C= 25°C

P_D@T_C= 100°C

390

200

2.6

W/°C

T_J

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds (1.6mm from case)

Mounting torque, 6-32 or M3 screw

300

10 lbf•in (1.1N•m)

Thermal Resistance

Symbol

Parameter

Junction-to-Case 

Typ.

–––

Max.

Units

0.38

–––

R_JC

R_CS

R_JA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

Notes  through  are on page 2.

2019-08-16

12 3 4 5 6 7...10

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与IRFB4332相关器件

型号	品牌	获取价格	描述	数据表
IRFB4332PBF	INFINEON	获取价格	PDP SWITCH
IRFB4410	INFINEON	获取价格	HEXFET Power MOSFET
IRFB4410PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFB4410Z	INFINEON	获取价格	The StrongIRFET™ power MOSFET family is optim
IRFB4410ZGPBF	INFINEON	获取价格	HEXFETPower MOSFET
IRFB4410ZPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFB4410ZTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Me
IRFB4410ZTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Me
IRFB4510	INFINEON	获取价格	The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil
IRFB4510GPBF	INFINEON	获取价格	Power Field-Effect Transistor

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