Datasheet > IRFB4115

IRFB4115

更新时间： 2024-11-19 14:54:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	318K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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IRFB4115 数据手册

IRFB4115PbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

V_DSS

R_DS(on)typ.

max.

150V

9.3m

Ω

11m

Ω

l Hard Switched and High Frequency Circuits

I_D

104A

(Silicon Limited)

Benefits

l Improved Gate, Avalanche and Dynamic dv/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead Free

TO-220AB

l RoHS Compliant, Halogen-Free

Gate

Drain

Source

Standard Pack

Base Part Number

Package Type

Orderable Part Number

Form

Tube

Quantity

IRFB4115PbF

TO-220

IRFB4115PbF

Absolute Maximum Ratings

Symbol

Parameter

Max.

104

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

420

380

2.5

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

dv/dt

T_J

± 20

Gate-to-Source Voltage

Peak Diode Recovery

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

300

10lb in (1.1N m)

830

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy

Thermal Resistance

Symbol

Parameter

Typ.

Max.

0.40

–––

Units

°C/W

R_θ

Junction-to-Case

–––

0.50

–––

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

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November 11, 2014

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