是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 15 weeks | 风险等级: | 1.7 |
Is Samacsys: | N | 配置: | Single |
最大漏极电流 (Abs) (ID): | 38 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高工作温度: | 175 °C | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 341 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFB41N15D | INFINEON |
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Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A) | |
IRFB41N15DPBF | INFINEON |
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HEXFET Power MOSFET | |
IRFB41N15DTRL | INFINEON |
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Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
IRFB41N15DTRLPBF | INFINEON |
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Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
IRFB41N15DTRR | INFINEON |
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Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
IRFB41N15DTRRPBF | INFINEON |
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Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
IRFB4212PBF | INFINEON |
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DIGITAL AUDIO MOSFET | |
IRFB4215 | INFINEON |
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HEXFET Power MOSFET | |
IRFB4215PBF | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRFB4227 | INFINEON |
获取价格 |
The StrongIRFET™ power MOSFET family is optim |