5秒后页面跳转
FDP047N10 PDF预览

FDP047N10

更新时间: 2024-02-17 02:00:42
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 375K
描述
N-Channel PowerTrench MOSFET 100V, 164A, 4.7mOHM

FDP047N10 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.82

FDP047N10 数据手册

 浏览型号FDP047N10的Datasheet PDF文件第2页浏览型号FDP047N10的Datasheet PDF文件第3页浏览型号FDP047N10的Datasheet PDF文件第4页浏览型号FDP047N10的Datasheet PDF文件第5页浏览型号FDP047N10的Datasheet PDF文件第6页浏览型号FDP047N10的Datasheet PDF文件第7页 
August 2010  
FDP047N10  
N-Channel PowerTrench MOSFET  
100V, 164A, 4.7mΩ  
®
Description  
General Description  
RDS(on) = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A  
This N-Channel MOSFET is producedusing Fairchild Semicon-  
ductor’s advance PowerTrench process that has been especially  
tailored to minimize the on-state resistance and yet maintain  
superior switching performance.  
Fast switching speed  
Low gate charge  
High performance trench technology for extremely low RDS(on)  
High power and current handing capability  
RoHS compliant  
Application  
DC to DC converters / Synchronous Rectification  
D
G
TO-220  
G
S
D
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*  
Symbol  
VDSS  
VGSS  
Parameter  
Ratings  
100  
Units  
V
Drain to Source Voltage  
Gate to Source Voltage  
±20  
V
164*  
116*  
A
Drain Current  
-
-
-
Continuous (TC =  
25oC, Silicon Limited)  
ID  
Continuous (TC = 100oC, Silicon Limited)  
A
Continuous (TC  
=
25oC, Package Limited)  
120  
A
IDM  
Drain Current  
- Pulsed  
(Note 1)  
656*  
1153  
4.5  
A
EAS  
dv/dt  
Single Pulsed Avalanche Energy  
Peak Diode Recovery dv/dt  
(Note 2)  
(Note 3)  
mJ  
V/ns  
W
W/oC  
oC  
(TC = 25oC)  
- Derate above 25oC  
375  
PD  
Power Dissipation  
2.5  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +175  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
300  
oC  
.
.
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.  
Thermal Characteristics  
Symbol  
RθJC  
Parameter  
Thermal Resistance, Junction to Case  
Ratings  
0.4  
Units  
RθCS  
RθJA  
Thermal Resistance, Case to Sink Typ.  
Thermal Resistance, Junction to Ambient  
0.5  
oC/W  
62.5  
©2010 Fairchild Semiconductor Corporation  
FDP047N10 Rev. B2  
1
www.fairchildsemi.com  

FDP047N10 替代型号

型号 品牌 替代类型 描述 数据表
FDP047N08 FAIRCHILD

类似代替

N-Channel PowerTrench㈢ MOSFET 75V, 164A, 4.7m
IPP041N12N3GXKSA1 INFINEON

功能相似

Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon,
IRFB4110PBF INFINEON

功能相似

High Efficiency Synchronous Rectification in SMPS

与FDP047N10相关器件

型号 品牌 获取价格 描述 数据表
FDP047N10_12 FAIRCHILD

获取价格

N-Channel PowerTrench® MOSFET 100V, 164A, 4.
FDP050AN06A0 FAIRCHILD

获取价格

N-Channel PowerTrench MOSFET
FDP050AN06A0 ROCHESTER

获取价格

18A, 60V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN
FDP050AN06A0 ONSEMI

获取价格

N 沟道,Power Trench® MOSFET,60V,80A,5mΩ
FDP050AN06A0_NL ROCHESTER

获取价格

18A, 60V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN
FDP053N08B FAIRCHILD

获取价格

N-Channel PowerTrench® MOSFET 80V, 120A, 5.3
FDP053N08B-F102 ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,80V,120A,5.3mΩ
FDP054N10 FAIRCHILD

获取价格

N-Channel PowerTrench® MOSFET 100V, 144A, 5.5
FDP054N10 ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,100V,144A,5.5mΩ
FDP054N10_12 FAIRCHILD

获取价格

N-Channel PowerTrench® MOSFET 100V, 144A, 5.