Datasheet > FDP054N10_12

FDP054N10_12

更新时间： 2024-10-02 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	290K
描述
N-Channel PowerTrenchÂ® MOSFET 100V, 144A, 5.5mÎ©

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FDP054N10_12 数据手册

April 2012

FDP054N10

N-Channel PowerTrench MOSFET

100V, 144A, 5.5mΩ

Features

Description

•

R_DS(on)= 4.6mΩ ( Typ.)@ V_GS= 10V, I_D= 75A

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench process that has been

especially tailored to minimize the on-state resistance and yet

maintain superior switching performance.

Fast Switching Speed

Low Gate Charge

High Performance Trench Technology for Extremely Low

R_DS(on)

Application

DC to DC Converters / Synchronous Rectification

•

High Power and Current Handling Capability

RoHS Compliant

TO-220

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted

Symbol

V_DSS

V_GSS

Parameter

Ratings

100

Units

Drain to Source Voltage

Gate to Source Voltage

±20

- Continuous (T_C= 25^oC, Silicon Limited)

- Continuous (T_C= 100^oC, Silicon Limited)

- Continuous (T_C= 25^oC, Package Limited)

144*

102

I_D

D r a i n C u r r e n t

120

I_DM

Drain Current

- Pulsed

(Note 1)

(Note 2)

(Note 3)

576

E_AS

dv/dt

Single Pulsed Avalanche Energy

Peak Diode Avalanche Energy

1153

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

263

P_D

Power Dissipation

1.75

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +175

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

Thermal Characteristics

Symbol

R_θJC

R_θJA

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Ratings

0.57

Units

^oC/W

62.5

FDP054N10 Rev. C1

www.fairchildsemi.com

12 3 4 5 6 7 8

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