Datasheet > FDP075N15A

FDP075N15A

更新时间： 2024-10-02 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	315K
描述
N-Channel PowerTrenchÂ® MOSFET 150V, 130A, 7.5mÎ©

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FDP075N15A 数据手册

October 2012

FDP075N15A_F102 / FDB075N15A

N-Channel PowerTrench^®MOSFET

150V, 130A, 7.5mΩ

Features

Description

•

R_DS(on)= 6.25mΩ ( Typ.)@ V_GS= 10V, I_D= 100A

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench® process that has

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

Fast Switching

Low Gate Charge

High Performance Trench Technology for Extremely Low

R_DS(on)

Application

•

High Power and Current Handling Capability

RoHS Compliant

•

DC to DC Converters

Synchronous Rectification for Telecommunication PSU

Battery Charger

AC motor drives and Uninterruptible Power Supplies

Off-line UPS

D²-PAK

FDB Series

TO-220

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted*

FDP075N15A_F102

FDB075N15A

Symbol

V_DSS

V_GSS

Parameter

Units

Drain to Source Voltage

Gate to Source Voltage

150

±20

-Continuous (T_C= 25^oC)

-Continuous (T_C= 100^oC)

- Pulsed

130

I_D

Drain Current

I_DM

Drain Current

(Note 1)

(Note 2)

(Note 3)

522

E_AS

dv/dt

Single Pulsed Avalanche Energy

Peak Diode Recovery dv/dt

588

6.0

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

333

P_D

Power Dissipation

2.22

-55 to +175

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

*Package limitation current is 120A.

Thermal Characteristics

FDP075N15A_F102

FDB075N15A

Symbol

Parameter

Units

R_θJC

R_θJA

Thermal Resistance, Junction to Case, Max

0.45

62.5

Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max

Thermal Resistance, Junction to Ambient D2-PAK (1 in²pad of 2 oz copper), Max

^oC/W

FDP075N15A_F102 / FDB075N15A Rev. C1

www.fairchildsemi.com

12 3 4 5 6 7...10

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