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FDP100N10_12 PDF预览

FDP100N10_12

更新时间: 2024-11-23 12:23:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 417K
描述
N-Channel PowerTrench® MOSFET 100V, 75A, 10mΩ

FDP100N10_12 数据手册

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March 2012  
FDP100N10  
N-Channel PowerTrench MOSFET  
100V, 75A, 10mΩ  
®
Features  
Description  
RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A  
This N-Channel MOSFET is producedusing Fairchild Semicon-  
ductor’s advanced PowerTrench process that has been espe-  
cially tailored to minimize the on-state resistance and yet  
maintain superior switching performance.  
Fast switching speed  
Low gate charge  
High performance trench technology for extremely low RDS(on)  
High power and current handing capability  
RoHS compliant  
Applications  
DC to DC converters / Synchronous Rectification  
D
G
TO-220  
FDP Series  
G D S  
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Ratings  
Units  
V
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
100  
±20  
V
- Continuous (TC = 75oC)  
- P uls ed  
75  
A
IDM  
D rai n Cur rent  
(Note 1)  
(Note 2)  
(Note 3)  
300  
A
EAS  
dv/dt  
Single Pulsed Avalanche Energy  
Peak Diode Recovery dv/dt  
365  
mJ  
V/ns  
W
W/oC  
oC  
6
(TC = 25oC)  
- Derate above 25oC  
208  
PD  
Power Dissipation  
1.4  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +175  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
300  
oC  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction to Case  
Thermal Resistance, Case to Sink Typ.  
Thermal Resistance, Junction to Ambient  
Ratings  
0.72  
Units  
RθJC  
RθCS  
RθJA  
0.5  
oC/W  
62.5  
©2012 Fairchild Semiconductor Corporation  
FDP100N10 Rev. C1  
1
www.fairchildsemi.com  

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