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FDP12N50_12 PDF预览

FDP12N50_12

更新时间: 2024-11-23 12:23:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
10页 538K
描述
N-Channel MOSFET 500V, 11.5A, 0.65Ω

FDP12N50_12 数据手册

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May 2012  
UniFETTM  
tm  
FDP12N50 / FDPF12N50T  
N-Channel MOSFET  
500V, 11.5A, 0.65Ω  
Features  
Description  
RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A  
Low gate charge ( Typ. 22nC)  
Low Crss ( Typ. 11pF)  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary, planar  
stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the avalanche  
and commutation mode. These devices are well suited for high  
efficient switched mode power supplies and active power factor  
correction.  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
RoHS compliant  
D
G
TO-220F  
TO-220  
FDP Series  
G D S  
G
D S  
FDPF Series  
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*  
Symbol  
VDSS  
VGSS  
Parameter  
FDP12N50 FDPF12N50T  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
500  
±30  
V
V
-Continuous (TC = 25oC)  
-Continuous (TC = 100oC)  
- P uls ed  
11.5  
6.9  
46  
11.5 *  
6.9 *  
46 *  
ID  
D r a in C u r r e n t  
A
IDM  
D rai n Cur rent  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
A
mJ  
A
EAS  
IAR  
Single Pulsed Avalanche Energy  
Avalanche Current  
456  
11.5  
16.7  
4.5  
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
mJ  
V/ns  
W
W/oC  
oC  
(TC = 25oC)  
- Derate above 25oC  
165  
42  
PD  
Power Dissipation  
1.33  
0.3  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
300  
oC  
*Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction to Case  
FDP12N50 FDPF12N50T  
Units  
RθJC  
RθCS  
RθJA  
0.75  
0.5  
3.0  
-
Thermal Resistance, Case to Sink Typ.  
Thermal Resistance, Junction to Ambient  
oC/W  
62.5  
62.5  
©2012 Fairchild Semiconductor Corporation  
FDP12N50 / FDPF12N50T Rev. C0  
1
www.fairchildsemi.com  

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