Datasheet > FDP150N10A

FDP150N10A

更新时间： 2024-11-26 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	321K
描述
N-Channel PowerTrenchÂ® MOSFET 100V, 50A, 15mÎ©

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FDP150N10A 数据手册

July 2011

FDP150N10A_F102

N-Channel PowerTrench^®MOSFET

100V, 50A, 15mΩ

Features

Description

•

R_DS(on)= 12.5mΩ ( Typ.)@ V_GS= 10V, I_D= 50A

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advance PowerTrench process that has been

especially tailored to minimize the on-state resistance and yet

maintain superior switching performance.

Fast Switching Speed

Low Gate Charge

High Performance Trench Technology for Extremely Low

R_DS(on)

Application

•

High Power and Current Handling Capability

RoHS Compliant

•

DC to DC Converters

Synchronous Rectification for Telecommunication PSU

Battery Charger

AC motor drives and Uninterruptible Power Supplies

Off-line UPS

TO-220

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted

Symbol

V_DSS

V_GSS

Parameter

FDP150N10A_F102

Units

Drain to Source Voltage

Gate to Source Voltage

100

±20

- Continuous (T_C= 25^oC)

- Continuous (T_C= 100^oC)

- Pulsed

I_D

Drain Current

I_DM

Drain Current

(Note 1)

(Note 2)

(Note 3)

200

E_AS

dv/dt

Single Pulsed Avalanche Energy

Peak Diode Recovery dv/dt

84.6

6.0

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

P_D

Power Dissipation

0.61

-55 to +175

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Units

Ratings

1.6

R_θJC

R_θJA

^oC/W

62.5

FDP150N10A_F102 Rev. A1

www.fairchildsemi.com

12 3 4 5 6 7...9

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