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FDP13N50F_12 PDF预览

FDP13N50F_12

更新时间: 2024-11-23 11:59:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 414K
描述
N-Channel MOSFET 500V, 12A, 0.54Ω

FDP13N50F_12 数据手册

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May 2012  
UniFETTM  
FDP13N50F / FDPF13N50FT  
tm  
N-Channel MOSFET  
500V, 12A, 0.54Ω  
Features  
Description  
RDS(on) = 0.42Ω ( Typ.)@ VGS = 10V, ID = 6A  
Low gate charge ( Typ. 30nC)  
Low Crss ( Typ. 14.5pF)  
Fast switching  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary, planar  
stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the avalanche  
and commutation mode. These devices are well suited for high  
efficient switched mode power supplies and active power factor  
correction.  
100% avalanche tested  
Improved dv/dt capability  
RoHS compliant  
D
G
TO-220  
FDP Series  
TO-220F  
FDPF Series  
G D S  
G
S
D
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*  
Symbol  
VDSS  
VGSS  
Parameter  
FDP13N50F FDPF13N50FT Units  
Drain to Source Voltage  
Gate to Source Voltage  
500  
±30  
V
V
-Continuous (TC = 25oC)  
-Continuous (TC = 100oC)  
- Pulsed  
12  
7.2  
48  
12*  
7.2*  
48*  
ID  
Drain Current  
A
IDM  
Drain Current  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
A
mJ  
A
EAS  
IAR  
Single Pulsed Avalanche Energy  
Avalanche Current  
684  
12  
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
19.5  
20  
mJ  
V/ns  
W
(TC = 25oC)  
- Derate above 25oC  
195  
42  
PD  
Power Dissipation  
1.53  
0.33  
W/oC  
oC  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
300  
oC  
*Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction to Case  
FDP13N50F FDPF13N50FT Units  
RθJC  
RθCS  
RθJA  
0.65  
0.5  
3.0  
-
Thermal Resistance, Case to Sink Typ.  
Thermal Resistance, Junction to Ambient  
oC/W  
62.5  
62.5  
©2012 Fairchild Semiconductor Corporation  
FDP13N50F / FDPF13N50FT Rev.C1  
1
www.fairchildsemi.com  

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