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FDP14N60 PDF预览

FDP14N60

更新时间: 2024-11-26 21:15:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
6页 162K
描述
Power Field-Effect Transistor, 14A I(D), 600V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FDP14N60 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
风险等级:5.78雪崩能效等级(Eas):550 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):14 A
最大漏极电流 (ID):14 A最大漏源导通电阻:0.49 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn85Pb15)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDP14N60 数据手册

 浏览型号FDP14N60的Datasheet PDF文件第2页浏览型号FDP14N60的Datasheet PDF文件第3页浏览型号FDP14N60的Datasheet PDF文件第4页浏览型号FDP14N60的Datasheet PDF文件第5页浏览型号FDP14N60的Datasheet PDF文件第6页 
May 2003  
FDP14N60  
14A, 600V, 0.490 Ohm, N-Channel SMPS Power MOSFET  
Applications  
Features  
Switch Mode Power Supplies(SMPS), such as  
Low Gate Charge  
Requirement  
Q
results in Simple Drive  
g
PFC Boost  
Two Switch Forward Converter  
Single Switch Forward Converter  
Flyback Converter  
Improved Gate, Avalanche and High Reapplied dv/dt  
Ruggedness  
Reduced r  
DS(ON)  
Buck Converter  
Reduced Miller Capacitance and Low Input Capacitance  
Improved Switching Speed with Low EMI  
175°C Rated Junction Temperature  
High Speed Switching  
Package  
Symbol  
JEDEC TO-220  
D
G
S
S
Drain  
(FLANGE)  
D
G
o
Absolute Maximum Ratings T = 25 C unless otherwise noted  
J
Symbol  
Parameter  
Drain to Source Voltage  
Ratings  
600  
Units  
V
V
V
DSS  
V
Gate to Source Voltage  
±30  
GS  
Drain Current  
o
14  
10  
A
A
Continuous (T = 25 C, V = 10V)  
C
GS  
I
D
o
Continuous (T = 100 C, V = 10V)  
C
GS  
Pulsed  
Figure 10  
A
Power dissipation  
Derate above 25 C  
300  
2
W
W/ C  
P
D
o
o
2
E
Single Pulse Avalanche Energy  
Avalanche Current  
550  
14  
mJ  
AS  
I
A
AR  
o
T , T  
Operating and Storage Temperature  
Soldering Temperature for 10 seconds  
-55 to 175  
C
J
STG  
o
300 (1.6mm from case)  
C
Thermal Characteristics  
o
R
Thermal Resistance Junction to Case  
0.50  
C/W  
θJC  
o
R
Thermal Resistance Case to Sink, Flat, Greased Surface  
Thermal Resistance Junction to Ambient  
0.24 TYP  
62  
C/W  
C/W  
θCS  
o
R
θJA  
©2003 Fairchild Semiconductor Corporation  
FDP14N60 Rev. A  

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