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FDP16AN08A0 PDF预览

FDP16AN08A0

更新时间: 2024-11-25 22:20:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关局域网
页数 文件大小 规格书
11页 261K
描述
N-Channel PowerTrench MOSFET 75V, 58A, 16mз

FDP16AN08A0 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.7
Is Samacsys:N雪崩能效等级(Eas):117 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:75 V最大漏极电流 (Abs) (ID):9 A
最大漏极电流 (ID):9 A最大漏源导通电阻:0.016 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):135 W
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDP16AN08A0 数据手册

 浏览型号FDP16AN08A0的Datasheet PDF文件第2页浏览型号FDP16AN08A0的Datasheet PDF文件第3页浏览型号FDP16AN08A0的Datasheet PDF文件第4页浏览型号FDP16AN08A0的Datasheet PDF文件第5页浏览型号FDP16AN08A0的Datasheet PDF文件第6页浏览型号FDP16AN08A0的Datasheet PDF文件第7页 
July 2002  
FDP16AN08A0 / FDB16AN08A0  
N-Channel PowerTrench® MOSFET  
75V, 58A, 16mΩ  
Features  
Applications  
rDS(ON) = 13m(Typ.), VGS = 10V, ID = 58A  
Qg(tot) = 28nC (Typ.), VGS = 10V  
Low Miller Charge  
42V Automotive Load Control  
Starter / Alternator Systems  
Electronic Power Steering Systems  
Electronic Valve Train Systems  
Low Qrr Body Diode  
UIS Capability (Single Pulse and Repetitive Pulse)  
Qualified to AEC Q101  
DC-DC converters and Off-line UPS  
Distributed Power Architectures and VRMs  
Primary Switch for 24V and 48V systems  
Formerly developmental type 82660  
D
DRAIN  
(FLANGE)  
GATE  
SOURCE  
DRAIN  
GATE  
G
DRAIN  
SOURCE  
(FLANGE)  
TO-220AB  
TO-263AB  
S
FDP SERIES  
FDB SERIES  
MOSFET Maximum Ratings TC = 25°C unless otherwise noted  
Symbol  
VDSS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
75  
V
V
±20  
Continuous (TC = 25oC, VGS = 10V)  
Continuous (TC = 100oC, VGS = 10V)  
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W)  
Pulsed  
58  
A
ID  
44  
9
A
A
Figure 4  
117  
EAS  
Single Pulse Avalanche Energy (Note 1)  
Power dissipation  
mJ  
W
135  
PD  
Derate above 25oC  
0.9  
W/oC  
oC  
TJ, TSTG  
Operating and Storage Temperature  
-55 to 175  
Thermal Characteristics  
RθJC  
RθJA  
RθJA  
Thermal Resistance Junction to Case TO-220,TO-263  
1.11  
62  
oC/W  
oC/W  
oC/W  
Thermal Resistance Junction to Ambient TO-220,TO-263  
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area  
43  
This product has been designed to meet the extreme test conditions and environment demanded by the automotive  
industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/  
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.  
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality  
systems certification.  
©2002 Fairchild Semiconductor Corporation  
FDP16AN08A0 / FDB16AN08A0 Rev. A1  

FDP16AN08A0 替代型号

型号 品牌 替代类型 描述 数据表
STP60NF06 STMICROELECTRONICS

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STP5NK100Z STMICROELECTRONICS

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STP55NF06 STMICROELECTRONICS

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N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220

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