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FDP16AN08A0

更新时间： 2024-11-24 11:13:03
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
13页 632K
描述
N 沟道，PowerTrench® MOSFET，75V，58A，16mΩ

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中文翻译

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FDP16AN08A0 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：1.51Is Samacsys：N
雪崩能效等级（Eas）：117 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：75 V
最大漏极电流 (Abs) (ID)：9 A最大漏极电流 (ID)：9 A
最大漏源导通电阻：0.016 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：135 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDP16AN08A0 数据手册

 浏览型号FDP16AN08A0的Datasheet PDF文件第2页浏览型号FDP16AN08A0的Datasheet PDF文件第3页浏览型号FDP16AN08A0的Datasheet PDF文件第4页浏览型号FDP16AN08A0的Datasheet PDF文件第5页浏览型号FDP16AN08A0的Datasheet PDF文件第6页浏览型号FDP16AN08A0的Datasheet PDF文件第7页 
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