Datasheet > FDP19N40_12

FDP19N40_12

更新时间： 2024-11-23 11:59:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	232K
描述
N-Channel MOSFET 400V, 19A, 0.24Î©

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FDP19N40_12 数据手册

February 2012

UniFET^TM

FDP19N40

N-Channel MOSFET

400V, 19A, 0.24Ω

Features

Description

•

R_DS(on)=0.2Ω ( Typ.)@ V_GS= 10V, I_D= 9.5A

Low Gate Charge ( Typ. 32nC)

Low C_rss( Typ. 20pF)

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pluse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power suppliesand active power

factor correction.

Fast Switching

100% Avalanche Tested

Improved dv/dt Capability

RoHS Compliant

TO-220

FDP Series

D S

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted*

Symbol

V_DSS

V_GSS

Parameter

FDP19N40

400

Units

Drain to Source Voltage

Gate to Source Voltage

±30

-Continuous (T_C= 25^oC)

-Continuous (T_C= 100^oC)

- Pulsed

I_D

Drain Current

11.4

I_DM

Drain Current

(Note 1)

(Note 2)

(Note 1)

(Note 3)

E_AS

I_AR

Single Pulsed Avalanche Energy

Avalanche Current

542

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

21.5

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

215

P_D

Power Dissipation

1.65

-55 to +150

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

*Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to Case

FDP19N40

0.6

Units

R_θJC

R_θCS

R_θJA

Thermal Resistance, Case to Sink Typ.

Thermal Resistance, Junction to Ambient

0.5

^oC/W

62.5

FDP19N40 Rev.C0

www.fairchildsemi.com

12 3 4 5 6 7 8

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