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FDP19N40 PDF预览

FDP19N40

更新时间： 2024-11-24 11:16:11
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 683K
描述
功率 MOSFET，N 沟道，UniFETTM，400V，19A，240mΩ，TO-220

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中文翻译

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FDP19N40 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：4 weeks风险等级：1.55
雪崩能效等级（Eas）：542 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：400 V最大漏极电流 (Abs) (ID)：19 A
最大漏极电流 (ID)：19 A最大漏源导通电阻：0.24 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：215 W
最大脉冲漏极电流 (IDM)：76 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDP19N40 数据手册

 浏览型号FDP19N40的Datasheet PDF文件第2页浏览型号FDP19N40的Datasheet PDF文件第3页浏览型号FDP19N40的Datasheet PDF文件第4页浏览型号FDP19N40的Datasheet PDF文件第5页浏览型号FDP19N40的Datasheet PDF文件第6页浏览型号FDP19N40的Datasheet PDF文件第7页 
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