5秒后页面跳转
FDP16N50_12 PDF预览

FDP16N50_12

更新时间: 2024-11-23 11:59:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
10页 800K
描述
500V N-Channel MOSFET

FDP16N50_12 数据手册

 浏览型号FDP16N50_12的Datasheet PDF文件第2页浏览型号FDP16N50_12的Datasheet PDF文件第3页浏览型号FDP16N50_12的Datasheet PDF文件第4页浏览型号FDP16N50_12的Datasheet PDF文件第5页浏览型号FDP16N50_12的Datasheet PDF文件第6页浏览型号FDP16N50_12的Datasheet PDF文件第7页 
July 2012  
TM  
UniFET  
FDP16N50 / FDPF16N50 / FDPF16N50T  
500V N-Channel MOSFET  
Features  
Description  
16A, 500V, RDS(on) = 0.38Ω @VGS = 10 V  
Low gate charge ( typical 32 nC)  
Low Crss ( typical 20 pF)  
Fast switching  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary, planar  
stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the avalanche  
and commutation mode. These devices are well suited for high  
efficient switched mode power supplies and active power factor  
correction.  
100% avalanche tested  
Improved dv/dt capability  
D
G
TO-220F  
FDPF Series  
S
TO-220  
FDP Series  
G D  
S
G
D S  
Absolute Maximum Ratings  
FDPF16N50 /  
FDPF16N50T  
Symbol  
Parameter  
FDP16N50  
Unit  
VDSS  
Drain-Source Voltage  
Drain Current  
500  
V
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
16  
9.6  
16 *  
9.6 *  
A
A
(Note 1)  
(Note 2)  
IDM  
Drain Current  
- Pulsed  
64  
64 *  
A
V
VGSS  
EAS  
IAR  
Gate-Source voltage  
±30  
780  
16  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
(Note 1)  
(Note 1)  
(Note 3)  
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
20  
mJ  
V/ns  
4.5  
Power Dissipation  
(TC = 25°C)  
- Derate above 25°C  
200  
1.59  
38.5  
0.3  
W
W/°C  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
300  
°C  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
°C  
* Drain current limited by maximum junction temperature  
Thermal Characteristics  
FDPF16N50 /  
FDPF16N50T  
Symbol  
Parameter  
FDP16N50  
Unit  
RθJC  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink Typ.  
Thermal Resistance, Junction-to-Ambient  
0.63  
0.5  
3.3  
--  
°C/W  
°C/W  
°C/W  
RθCS  
RθJA  
62.5  
62.5  
©2012 Fairchild Semiconductor Corporation  
1
www.fairchildsemi.com  
FDP16N50 / FDPF16N50 / FDPF16N50T Rev. C1  

与FDP16N50_12相关器件

型号 品牌 获取价格 描述 数据表
FDP16N50U FAIRCHILD

获取价格

N-Channel UniFETTM Ultra FRFET MOSFET
FDP16T ADAM-TECH

获取价格

IDC DIP & TRANSITION PLUGS .100 [2.54] CENTERLINE
FDP17N60N FAIRCHILD

获取价格

N-Channel MOSFET 600V, 17A, 0.34Ω
FDP18G ADAM-TECH

获取价格

IDC DIP & TRANSITION PLUGS .100 [2.54] CENTERLINE
FDP18GGY ADAM-TECH

获取价格

DIP Connector, 18 Contact(s), 2 Row(s), Male, 0.1 inch Pitch, IDC Terminal, Gray Insulator
FDP18N20F FAIRCHILD

获取价格

N-Channel MOSFET, FRFET 200V, 18A, 0.145ヘ
FDP18N20F ONSEMI

获取价格

功率 MOSFET,N 沟道,UniFETTM,FRFET®,200 V,18 A,140
FDP18N50 FAIRCHILD

获取价格

500V N-Channel MOSFET
FDP18N50 ONSEMI

获取价格

功率 MOSFET,N 沟道,UniFETTM,500 V,18 A,265 mΩ,TO-
FDP18N50_0704 FAIRCHILD

获取价格

500V N-Channel MOSFET