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FDP150N10 PDF预览

FDP150N10

更新时间： 2024-11-24 11:15:19
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 449K
描述
N 沟道，PowerTrench® MOSFET，100V，57A，15mΩ

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中文翻译

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FDP150N10 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：9 weeks风险等级：1.47
雪崩能效等级（Eas）：132 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：57 A
最大漏极电流 (ID)：57 A最大漏源导通电阻：0.015 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：110 W
最大脉冲漏极电流 (IDM)：228 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDP150N10 数据手册

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与FDP150N10相关器件

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FDP150N10A FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 100V, 50A, 15m
FDP150N10A-F102 ONSEMI

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 		N 沟道，PowerTrench® MOSFET，100V，50A，15mΩ
FDP15N40 FAIRCHILD

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 		N-Channel MOSFET 400V, 15A, 0.3Ω
FDP15N40 ONSEMI

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 		功率 MOSFET，N 沟道，UniFETTM，400V，15A，300mΩ，TO-220
FDP15N50 FAIRCHILD

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 		15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET
FDP15N50_NL FAIRCHILD

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 		Power Field-Effect Transistor, 15A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Met
FDP15N65 FAIRCHILD

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 		650V N-Channel MOSFET
FDP15N65_0610 FAIRCHILD

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 		650V N-Channel MOSFET
FDP15N65_0704 FAIRCHILD

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 		650V N-Channel MOSFET
FDP16AN08A0 FAIRCHILD

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 		N-Channel PowerTrench MOSFET 75V, 58A, 16mз

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