July 2003
FDB13AN06A0 / FDP13AN06A0
N-Channel PowerTrench® MOSFET
60V, 62A, 13.5mΩ
Features
Applications
•
•
•
•
•
•
rDS(ON) = 11.5mΩ(Typ.), VGS = 10V, ID = 62A
Qg(tot) = 22nC (Typ.), VGS = 10V
Low Miller Charge
•
•
•
•
•
•
•
Motor / Body Load Control
ABS Systems
Powertrain Management
Low QRR Body Diode
Injection Systems
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
DC-DC converters and Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 12V and 24V systems
Formerly developmental type 82555
D
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
GATE
G
DRAIN
SOURCE
(FLANGE)
TO-220AB
TO-263AB
S
FDP SERIES
FDB SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current
60
V
V
±20
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Continuous (TA = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
62
A
ID
44
10.9
A
A
Figure 4
56
A
EAS
Single Pulse Avalanche Energy (Note 1)
Power dissipation
mJ
W
115
PD
Derate above 25oC
0.77
W/oC
oC
TJ, TSTG
Operating and Storage Temperature
-55 to 175
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-220,TO-263
1.3
62
43
oC/W
oC/W
oC/W
Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2003 Fairchild Semiconductor Corporation
FDB13AN06A0 / FDP13AN06A0 Rev. A1