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FDP13AN06A PDF预览

FDP13AN06A

更新时间: 2022-11-25 18:37:30
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
11页 293K
描述
N-Channel PowerTrench MOSFET 60V, 62A, 13.5mз

FDP13AN06A 数据手册

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July 2003  
FDB13AN06A0 / FDP13AN06A0  
N-Channel PowerTrench® MOSFET  
60V, 62A, 13.5mΩ  
Features  
Applications  
rDS(ON) = 11.5m(Typ.), VGS = 10V, ID = 62A  
Qg(tot) = 22nC (Typ.), VGS = 10V  
Low Miller Charge  
Motor / Body Load Control  
ABS Systems  
Powertrain Management  
Low QRR Body Diode  
Injection Systems  
UIS Capability (Single Pulse and Repetitive Pulse)  
Qualified to AEC Q101  
DC-DC converters and Off-line UPS  
Distributed Power Architectures and VRMs  
Primary Switch for 12V and 24V systems  
Formerly developmental type 82555  
D
DRAIN  
(FLANGE)  
GATE  
SOURCE  
DRAIN  
GATE  
G
DRAIN  
SOURCE  
(FLANGE)  
TO-220AB  
TO-263AB  
S
FDP SERIES  
FDB SERIES  
MOSFET Maximum Ratings TC = 25°C unless otherwise noted  
Symbol  
VDSS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
60  
V
V
±20  
Continuous (TC = 25oC, VGS = 10V)  
Continuous (TC = 100oC, VGS = 10V)  
Continuous (TA = 25oC, VGS = 10V, RθJA = 43oC/W)  
Pulsed  
62  
A
ID  
44  
10.9  
A
A
Figure 4  
56  
A
EAS  
Single Pulse Avalanche Energy (Note 1)  
Power dissipation  
mJ  
W
115  
PD  
Derate above 25oC  
0.77  
W/oC  
oC  
TJ, TSTG  
Operating and Storage Temperature  
-55 to 175  
Thermal Characteristics  
RθJC  
RθJA  
RθJA  
Thermal Resistance Junction to Case TO-220,TO-263  
1.3  
62  
43  
oC/W  
oC/W  
oC/W  
Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2)  
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area  
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a  
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/  
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.  
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems  
certification.  
©2003 Fairchild Semiconductor Corporation  
FDB13AN06A0 / FDP13AN06A0 Rev. A1  

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