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FDP120N10 PDF预览

FDP120N10

更新时间： 2024-11-27 11:13:23
品牌 Logo 应用领域
安森美 - ONSEMI 局域网PC开关脉冲晶体管
页数 文件大小 规格书
10页 468K
描述
N 沟道，PowerTrench® MOSFET，100V，74A，12mΩ

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中文翻译

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FDP120N10 技术参数

是否无铅：不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：9 weeks风险等级：1.54
Samacsys Confidence：3Samacsys Status：Released
Samacsys PartID：167164Samacsys Pin Count：3
Samacsys Part Category：MOSFET (N-Channel)Samacsys Package Category：Transistor Outline, Vertical
Samacsys Footprint Name：FDP120N10Samacsys Released Date：2018-12-12 16:37:29
Is Samacsys：N雪崩能效等级（Eas）：198 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：74 A最大漏极电流 (ID)：74 A
最大漏源导通电阻：0.012 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：170 W最大脉冲漏极电流 (IDM)：296 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDP120N10 数据手册

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