FDP12N50

更新时间： 2024-11-23 03:36:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	382K
描述
N-Channel MOSFET 500V, 11.5A, 0.65ヘ

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDP12N50 数据手册

June 2007

UniFET

FDP12N50 / FDPF12N50

N-Channel MOSFET

500V, 11.5A, 0.65Ω

Features

Description

•

R_DS(on)= 0.55Ω (Typ.)@ V_GS= 10V, I_D= 6A

Low gate charge ( Typ. 22nC)

Low Crss ( Typ. 11pF)

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

Fast switching

100% avalanche tested

Improved dv/dt capability

RoHS compliant

TO-220F

TO-220

FDP Series

G D S

D S

FDPF Series

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted*

Symbol

V_DSS

V_GSS

Parameter

FDP12N50

FDPF12N50

500

Units

Drain to Source Voltage

Gate to Source Voltage

±30

-Continuous (T_C= 25^oC)

-Continuous (T_C= 100^oC)

- P uls ed

11.5

6.9

11.5 *

6.9 *

46 *

I_D

D r a in C u r r e n t

I_DM

D rai n Cur rent

(Note 1)

(Note 2)

(Note 1)

(Note 3)

E_AS

I_AR

Single Pulsed Avalanche Energy

Avalanche Current

456

11.5

16.7

4.5

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

165

P_D

Power Dissipation

1.33

0.3

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

*Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to Case

FDP12N50 FDPF12N50

Units

R_θJC

R_θCS

R_θJA

0.75

0.5

3.0

Thermal Resistance, Case to Sink Typ.

Thermal Resistance, Junction to Ambient

^oC/W

62.5

FDP12N50 / FDPF12N50 Rev. A

www.fairchildsemi.com

12 3 4 5 6 7...10

中文翻译

下载PDF

与FDP12N50相关器件

型号	品牌	获取价格	描述	数据表
FDP12N50_12	FAIRCHILD	获取价格	N-Channel MOSFET 500V, 11.5A, 0.65Î©
FDP12N50F	FAIRCHILD	获取价格	N-Channel MOSFET 500V, 11.5A, 0.7ヘ
FDP12N50NZ	FAIRCHILD	获取价格	N-Channel UniFET II MOSFETï
FDP12N50NZ	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM II，500 V，11.5 A，520 m
FDP12N60NZ	FAIRCHILD	获取价格	N-Channel UniFETTM II MOSFET 600 V, 12 A, 650
FDP12N60NZ	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM II，600 V，12 A，650 mΩ，
FDP13AN06A	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET 60V, 62A, 13.5mз
FDP13AN06A0	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET 60V, 62A, 13.5mohm
FDP13N40	FAIRCHILD	获取价格	Power Field-Effect Transistor, 13A I(D), 400V, 0.37ohm, 1-Element, N-Channel, Silicon, Met
FDP13N50F	FAIRCHILD	获取价格	N-Channel MOSFET 500V, 12A, 0.54ヘ