September 2002
FDP120AN15A0 / FDD120AN15A0
®
N-Channel PowerTrench MOSFET
150V, 14A, 120mΩ
Features
Applications
•
•
•
•
•
•
rDS(ON) = 101mΩ(Typ.), VGS = 10V, ID = 4A
Qg(tot) = 11.2nC (Typ.), VGS = 10V
Low Miller Charge
•
•
•
•
•
•
•
DC/DC Converters and Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Direct Injection / Diesel Injection Systems
42V Automotive Load Control
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Electronic Valve Train Systems
Formerly developmental type 82845
DRAIN
(FLANGE)
D
S
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
GATE
G
SOURCE
TO-252AA
FDD SERIES
TO-220AB
FDP SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
Parameter
Ratings
150
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current
V
V
±20
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V) with RθJA = 52oC/W
Pulsed
14
A
ID
9.7
2.8
A
A
Figure 4
122
A
EAS
Single Pulse Avalanche Energy (Note 1)
Power dissipation
mJ
W
65
PD
Derate above 25oC
0.43
W/oC
oC
TJ, TSTG
Operating and Storage Temperature
-55 to 175
Thermal Characteristics
RθJC
RθJA
RθJA
RθJA
Thermal Resistance Junction to Case TO-252, TO-220
2.31
100
62
oC/W
oC/W
oC/W
oC/W
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-220 (Note 2)
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
52
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
FDP120AN15A0 / FDD120AN15A0 Rev. B