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FDP120AN15A0 PDF预览

FDP120AN15A0

更新时间: 2024-02-03 13:36:29
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
11页 245K
描述
N-Channel PowerTrench MOSFET

FDP120AN15A0 数据手册

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Typical Characteristics TC = 25°C unless otherwise noted  
100  
10  
1
50  
If R = 0  
= (L)(I )/(1.3*RATED BV  
If R 0  
10µs  
t
AV  
- V  
DD  
)
AS  
DSS  
t
= (L/R)ln[(I *R)/(1.3*RATED BV  
- V ) +1]  
DSS DD  
AV  
AS  
100µs  
10  
o
STARTING T = 25 C  
J
1ms  
OPERATION IN THIS  
AREA MAY BE  
LIMITED BY r  
DS(ON)  
10ms  
o
STARTING T = 150 C  
J
DC  
SINGLE PULSE  
T
= MAX RATED  
= 25 C  
J
o
T
C
0.1  
1
1
10  
, DRAIN TO SOURCE VOLTAGE (V)  
100  
200  
0.01  
0.1  
t , TIME IN AVALANCHE (ms)  
AV  
1
V
DS  
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515  
Figure 6. Unclamped Inductive Switching  
Capability  
Figure 5. Forward Bias Safe Operating Area  
30  
30  
PULSE DURATION = 80µs  
PULSE DURATION = 80µs  
V
= 10V  
GS  
DUTY CYCLE = 0.5% MAX  
DUTY CYCLE = 0.5% MAX  
o
25  
20  
15  
10  
5
25  
20  
15  
10  
5
V
= 15V  
DD  
V
= 7V  
= 6V  
T
= 25 C  
C
GS  
V
GS  
o
T
= 25 C  
J
o
o
T
J
= 175 C  
T
= -55 C  
V
= 5V  
J
GS  
0
0
3
4
5
6
7
0
1
2
3
4
5
V
, GATE TO SOURCE VOLTAGE (V)  
V
DS  
, DRAIN TO SOURCE VOLTAGE (V)  
GS  
Figure 7. Transfer Characteristics  
Figure 8. Saturation Characteristics  
140  
130  
120  
110  
100  
90  
2.5  
PULSE DURATION = 80µs  
DUTY CYCLE = 0.5% MAX  
PULSE DURATION = 80µs  
DUTY CYCLE = 0.5% MAX  
2.0  
V
= 6V  
GS  
1.5  
1.0  
0.5  
V
= 10V  
GS  
V
= 10V, I = 4A  
GS  
D
-80  
-40  
0
40  
80  
120  
160  
200  
0
3
6
9
12  
15  
o
I , DRAIN CURRENT (A)  
T , JUNCTION TEMPERATURE ( C)  
J
D
Figure 9. Drain to Source On Resistance vs Drain  
Current  
Figure 10. Normalized Drain to Source On  
Resistance vs Junction Temperature  
©2002 Fairchild Semiconductor Corporation  
FDP120AN15A0 / FDD120AN15A0 Rev. B  

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