Datasheet > FDP120AN15A0

FDP120AN15A0

更新时间： 2022-11-26 19:09:25

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
11页	245K
描述
N-Channel PowerTrench MOSFET

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FDP120AN15A0 数据手册

Package Marking and Ordering Information

Device Marking

FDD120AN15A0

FDP120AN15A0

Device

Package

TO-252AA

TO-220AB

Reel Size

330mm

Tube

Tape Width

16mm

Quantity

2500 units

50 units

FDD120AN15A0

FDP120AN15A0

N/A

Electrical Characteristics ^T_C= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

B_VDSS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

I_D= 250µA, V_GS= 0V

150

_DS= 120V

I_DSS

µA

V_GS= 0V

T_C= 150^oC

250

±100

I_GSS

V_GS= ±20V

On Characteristics

V_GS(TH)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 250µA

I_D= 4A, V_GS= 10V

0.101 0.120

0.113 0.170

_D= 2A, V_GS= 6V

r_DS(ON)

Drain to Source On Resistance

Ω

I_D= 4A, V_GS= 10V,

T_J= 175^oC

0.235 0.282

Dynamic Characteristics

C_ISS

Input Capacitance

770

V_DS= 25V, V_GS= 0V,

f = 1MHz

C_OSS

C_RSS

Q_g(TOT)

Q_g(TH)

Q_gs

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge at 10V

Threshold Gate Charge

V_GS= 0V to 10V

11.2

1.4

3.5

2.1

2.6

14.5

V_GS= 0V to 2V

1.8

V_DD= 75V

_D= 4A

I_g= 1.0mA

Gate to Source Gate Charge

Gate Charge Threshold to Plateau

Gate to Drain “Miller” Charge

Q_gs2

Q_gd

Switching Characteristics (V_GS= 10V)

t_ON

t_d(ON)

t_r

Turn-On Time

Turn-On Delay Time

Rise Time

_DD= 75V, I_D= 4A

_GS= 10V, R_GS= 24Ω

t_d(OFF)

t_f

Turn-Off Delay Time

Fall Time

t_OFF

Turn-Off Time

Drain-Source Diode Characteristics

_SD= 4A

1.25

1.0

V_SD

Source to Drain Diode Voltage

I_SD= 2A

t_rr

Reverse Recovery Time

I_SD= 4A, dI_SD/dt = 100A/µs

Q_RR

Reverse Recovered Charge

109

Notes:

1: Starting T = 25°C, L = 27mH, I = 3A.

2: Pulse width = 100s.

FDP120AN15A0 / FDD120AN15A0 Rev. B

123 4 5 6 7...11

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