Datasheet > FDP100N10

FDP100N10

更新时间： 2024-02-04 02:09:03

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描述
N-Channel PowerTrench㈢ MOSFET

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FDP100N10 数据手册

July 2007

FDP100N10

N-Channel PowerTrench MOSFET

100V, 75A, 10mΩ

Features

Description

•

R_DS(on)= 8.2mΩ ( Typ.)@ V_GS= 10V, I_D= 75A

This N-Channel MOSFET is producedusing Fairchild Semicon-

ductor’s advanced PowerTrench process that has been espe-

cially tailored to minimize the on-state resistance and yet

maintain superior switching performance.

Fast switching speed

Low gate charge

High performance trench technology for extremely low R_DS(on)

•

High power and current handing capability

RoHS compliant

Applications

•

DC to DC converters / Synchronous Rectification

TO-220

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted*

Symbol

V_DSS

V_GSS

I_D

Parameter

Ratings

100

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

±20

-Continuous (T_C= 75^oC)

- P uls ed

I_DM

D rai n Cur rent

(Note 1)

(Note 2)

(Note 3)

300

E_AS

dv/dt

Single Pulsed Avalanche Energy

Peak Diode Recovery dv/dt

365

V/ns

W/^oC

^oC

4.8

(T_C= 25^oC)

- Derate above 25^oC

208

P_D

Power Dissipation

1.4

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +175

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

*Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to Case

Ratings

0.72

Units

R_θJC

R_θCS

R_θJA

Thermal Resistance, Case to Sink Typ.

Thermal Resistance, Junction to Ambient

0.5

^oC/W

62.5

*When mounted on the minimum pad size recommended (PCB Mount)

FDP100N10 Rev. A1

www.fairchildsemi.com

12 3 4 5 6 7 8

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