Datasheet > FDP085N10AF102

FDP085N10AF102

更新时间： 2024-11-23 12:48:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	298K
描述
N-Channel PowerTrenchÂ® MOSFET 100 V, 96 A, 8.5 mÎ©

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FDP085N10AF102 数据手册

March 2013

FDP085N10A_F102

N-Channel PowerTrench MOSFET

100 V, 96 A, 8.5 mΩ

Features

General Description

•

R_DS(on)= 7.35 mΩ ( Typ.)@ V_GS= 10 V, I_D= 96 A

This N-Channel MOSFET is produced using Fairchild

Semiconductor^®’s advance PowerTrench^®process that has

been tailored to minimize the on-state resistance while maintain-

ing superior switching performance.

Fast Switching Speed

Low Gate Charge, Q_G= 31 nC (Typ.)

High Performance Trench Technology for Extremely Low

R_DS(on)

•

High Power and Current Handling Capability

RoHS Compliant

Applications

•

Synchronous Rectification for ATX / Sever / Telecom PSU

Battery Protection Circuit

Motor Drives and Uninterruptible Power Supplies

TO-220

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted

Symbol

V_DSS

V_GSS

Parameter

FDP085N10A_F102

Unit

Drain to Source Voltage

Gate to Source Voltage

100

±20

-Continuous (T_C= 25^oC)

-Continuous (T_C= 100^oC)

- Pulsed

I_D

Drain Current

I_DM

Drain Current

(Note 1)

(Note 2)

(Note 3)

384

E_AS

dv/dt

Single Pulsed Avalanche Energy

Peak Diode Recovery dv/dt

269

6.0

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

188

P_D

Power Dissipation

1.25

-55 to +175

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

Thermal Characteristics

Symbol

Parameter

Unit

FDP085N10A_F102

R_θJC

R_θJA

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Junction to Ambient, Max.

0.8

^oC/W

62.5

FDP085N10A_F102 Rev. C0

www.fairchildsemi.com

12 3 4 5 6 7...9

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