5秒后页面跳转
FDP047N08 PDF预览

FDP047N08

更新时间: 2024-11-26 03:36:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 522K
描述
N-Channel PowerTrench㈢ MOSFET 75V, 164A, 4.7mヘ

FDP047N08 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.68
雪崩能效等级(Eas):670 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:75 V最大漏极电流 (Abs) (ID):164 A
最大漏极电流 (ID):164 A最大漏源导通电阻:0.0047 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):268 W
最大脉冲漏极电流 (IDM):656 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDP047N08 数据手册

 浏览型号FDP047N08的Datasheet PDF文件第2页浏览型号FDP047N08的Datasheet PDF文件第3页浏览型号FDP047N08的Datasheet PDF文件第4页浏览型号FDP047N08的Datasheet PDF文件第5页浏览型号FDP047N08的Datasheet PDF文件第6页浏览型号FDP047N08的Datasheet PDF文件第7页 
March 2008  
FDP047N08  
N-Channel PowerTrench MOSFET  
75V, 164A, 4.7mΩ  
tm  
®
Features  
Description  
RDS(on) = 3.8m( Typ.)@ VGS = 10V, ID = 80A  
This N-Channel MOSFET is produced using Fairchild Semicon-  
ductor’s advanced PowerTrench process that has been espe-  
cially tailored to minimize the on-state resistance and yet  
maintain superior switching performance.  
Fast switching speed  
Low gate charge  
High performance trench technology for extremely low RDS(on)  
High power and current handling capability  
RoHS compliant  
Application  
DC to DC convertors / Synchronous Rectification  
D
G
TO-220  
FDP Series  
G
D S  
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*  
Symbol  
VDSS  
VGSS  
Parameter  
Ratings  
75  
Units  
V
Drain to Source Voltage  
Gate to Source Voltage  
±20  
V
-Continuous (TC = 25oC)  
-Continuous (TC = 100oC)  
- P uls ed  
164*  
116*  
A
ID  
D r a in C u r r e n t  
A
IDM  
D rai n Cur rent  
(Note 1)  
(Note 2)  
(Note 3)  
656  
A
EAS  
dv/dt  
Single Pulsed Avalanche Energy  
Peak Diode Recovery dv/dt  
670  
mJ  
V/ns  
W
W/oC  
oC  
3.0  
(TC = 25oC)  
- Derate above 25oC  
268  
PD  
Power Dissipation  
1.79  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +175  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
300  
oC  
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A.  
Thermal Characteristics  
Symbol  
RθJC  
Parameter  
Thermal Resistance, Junction to Case  
Ratings  
0.56  
Units  
RθCS  
RθJA  
Thermal Resistance, Case to Sink Typ.  
Thermal Resistance, Junction to Ambient  
0.5  
oC/W  
62.5  
©2008 Fairchild Semiconductor Corporation  
FDP047N08 Rev. A  
1
www.fairchildsemi.com  

FDP047N08 替代型号

型号 品牌 替代类型 描述 数据表
FDP047N10 FAIRCHILD

类似代替

N-Channel PowerTrench MOSFET 100V, 164A, 4.7mOHM
STP160N75F3 STMICROELECTRONICS

功能相似

N-channel 75V - 3.5m ohm - 120A - TO-220 - TO-247 - D2PAK MDmesh TM low voltage Power MOSF
STP140NF75 STMICROELECTRONICS

功能相似

N-CHANNEL 75V - 0.0065 ohm -120A DPAK/IPAK/

与FDP047N08相关器件

型号 品牌 获取价格 描述 数据表
FDP047N08-F102 ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,75V,164A,4.7mΩ
FDP047N10 FAIRCHILD

获取价格

N-Channel PowerTrench MOSFET 100V, 164A, 4.7mOHM
FDP047N10 ONSEMI

获取价格

功率 MOSFET,N 沟道,QFET®,100 V,164 A,4.7 mΩ,TO-22
FDP047N10_12 FAIRCHILD

获取价格

N-Channel PowerTrench® MOSFET 100V, 164A, 4.
FDP050AN06A0 FAIRCHILD

获取价格

N-Channel PowerTrench MOSFET
FDP050AN06A0 ROCHESTER

获取价格

18A, 60V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN
FDP050AN06A0 ONSEMI

获取价格

N 沟道,Power Trench® MOSFET,60V,80A,5mΩ
FDP050AN06A0_NL ROCHESTER

获取价格

18A, 60V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN
FDP053N08B FAIRCHILD

获取价格

N-Channel PowerTrench® MOSFET 80V, 120A, 5.3
FDP053N08B-F102 ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,80V,120A,5.3mΩ