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STP160N75F3 PDF预览

STP160N75F3

更新时间: 2024-11-23 03:58:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
13页 362K
描述
N-channel 75V - 3.5m ohm - 120A - TO-220 - TO-247 - D2PAK MDmesh TM low voltage Power MOSFET

STP160N75F3 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:1.68Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:222386
Samacsys Pin Count:3Samacsys Part Category:Transistor
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-220
Samacsys Released Date:2015-07-28 07:20:37Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:75 V
最大漏极电流 (Abs) (ID):120 A最大漏极电流 (ID):120 A
最大漏源导通电阻:0.0045 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):330 W最大脉冲漏极电流 (IDM):480 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP160N75F3 数据手册

 浏览型号STP160N75F3的Datasheet PDF文件第2页浏览型号STP160N75F3的Datasheet PDF文件第3页浏览型号STP160N75F3的Datasheet PDF文件第4页浏览型号STP160N75F3的Datasheet PDF文件第5页浏览型号STP160N75F3的Datasheet PDF文件第6页浏览型号STP160N75F3的Datasheet PDF文件第7页 
STB160N75F3  
STP160N75F3 - STW160N75F3  
N-channel 75V - 3.5m- 120A - TO-220 - TO-247 - D2PAK  
MDmesh™ low voltage Power MOSFET  
TARGET SPECIFICATION  
General features  
Type  
VDSS  
75V  
75V  
75V  
RDS(on)  
4.2mΩ  
4.5mΩ  
4.5mΩ  
ID  
120A (1)  
120A (1)  
120A (1)  
STB160N75F3  
STP160N75F3  
STW160N75F3  
3
2
1
TO-220  
TO-247  
1. Current limited by package  
3
1
Ultra low on-resistance  
100% Avalanche tested  
PAK  
Description  
This N-channel enhancement mode Power  
MOSFET is the latest refinement of  
Internal schematic diagram  
STMicroelectronics unique “Single Feature  
Size™“strip-based process with less critical  
alignment steps and therefore a remarkable  
manufacturing reproducibility. The resulting  
transistor shows extremely high packing density  
for low on-resistance, rugged avalanche  
characteristics and low gate charge.  
Applications  
Switching application  
Order codes  
Part number  
Marking  
Package  
Packaging  
STB160N75F3  
STP160N75F3  
STW160N75F3  
160N75F3  
160N75F3  
160N75F3  
PAK  
TO-220  
TO-247  
Tape & reel  
Tube  
Tube  
February 2007  
Rev 1  
1/13  
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.  
www.st.com  
13  

STP160N75F3 替代型号

型号 品牌 替代类型 描述 数据表
STB160N75F3 STMICROELECTRONICS

完全替代

N-channel 75V - 3.5m ohm - 120A - TO-220 - TO-247 - D2PAK MDmesh TM low voltage Power MOSF
FDP047AN08A0 FAIRCHILD

功能相似

N-Channel UltraFET Trench MOSFET 75V, 80A, 4.

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