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FDP047AN08A0 PDF预览

FDP047AN08A0

更新时间: 2024-11-22 22:22:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关局域网
页数 文件大小 规格书
10页 241K
描述
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.7mз

FDP047AN08A0 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:3.29
雪崩能效等级(Eas):475 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:75 V
最大漏极电流 (Abs) (ID):15 A最大漏极电流 (ID):80 A
最大漏源导通电阻:0.0047 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):310 W认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDP047AN08A0 数据手册

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April 2002  
FDP047AN08A0  
N-Channel UltraFET® Trench MOSFET  
75V, 80A, 4.7mΩ  
Features  
Applications  
rDS(ON) = 4.0m(Typ.), VGS = 10V, ID = 80A  
Qg(tot) = 92nC (Typ.), VGS = 10V  
Low Miller Charge  
42V Automotive Load Control  
Starter / Alternator Systems  
Electronic Power Steering Systems  
Electronic Valve Train Systems  
Low Qrr Body Diode  
UIS Capability (Single Pulse and Repetitive Pulse)  
Qualified to AEC Q101  
DC-DC converters and Off-line UPS  
Distributed Power Architectures and VRMs  
Primary Switch for 24V and 48V systems  
Formerly developmental type 82684  
D
DRAIN  
(FLANGE)  
SOURCE  
DRAIN  
GATE  
G
TO-220AB  
FDP SERIES  
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted  
Symbol  
VDSS  
VGS  
Parameter  
Ratings  
75  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
V
V
±20  
Continuous (TC < 144oC, VGS = 10V)  
Continuous (TC = 25oC, VGS = 10V, with RθJA = 62oC/W)  
Pulsed  
80  
A
ID  
15  
Figure 4  
600  
A
A
EAS  
Single Pulse Avalanche Energy (Note 1)  
mJ  
Power dissipation  
Derate above 25oC  
310  
W
PD  
2.0  
W/oC  
oC  
TJ, TSTG  
Operating and Storage Temperature  
-55 to 175  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance Junction to Case TO-220  
Thermal Resistance Junction to Ambient TO-220 (Note 2)  
0.48  
62  
oC/W  
oC/W  
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a  
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/  
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.  
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems  
certification.  
©2002 Fairchild Semiconductor Corporation  
FDP047AN08A0 Rev. A  

FDP047AN08A0 替代型号

型号 品牌 替代类型 描述 数据表
FDP047AN08A0 ONSEMI

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