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FDP047N08-F102 PDF预览

FDP047N08-F102

更新时间： 2024-11-24 11:12:19
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 834K
描述
N 沟道，PowerTrench® MOSFET，75V，164A，4.7mΩ

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中文翻译

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FDP047N08-F102 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：unknown
Factory Lead Time：1 week风险等级：5.69
雪崩能效等级（Eas）：670 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：75 V最大漏极电流 (Abs) (ID)：164 A
最大漏极电流 (ID)：164 A最大漏源导通电阻：0.0047 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：615 pF
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：268 W
最大脉冲漏极电流 (IDM)：656 A表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
最大关闭时间（toff）：688 ns最大开启时间（吨）：514 ns
Base Number Matches：1

FDP047N08-F102 数据手册

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与FDP047N08-F102相关器件

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 		N-Channel PowerTrench MOSFET 100V, 164A, 4.7mOHM
FDP047N10 ONSEMI

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 		功率 MOSFET，N 沟道，QFET®，100 V，164 A，4.7 mΩ，TO-22
FDP047N10_12 FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 100V, 164A, 4.
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FDP050AN06A0 ROCHESTER

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 		18A, 60V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN
FDP050AN06A0 ONSEMI

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 		N 沟道，Power Trench® MOSFET，60V，80A，5mΩ
FDP050AN06A0_NL ROCHESTER

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 		18A, 60V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN
FDP053N08B FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 80V, 120A, 5.3
FDP053N08B-F102 ONSEMI

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 		N 沟道，PowerTrench® MOSFET，80V，120A，5.3mΩ
FDP054N10 FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 100V, 144A, 5.5

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