是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 1 week | 风险等级: | 0.71 |
雪崩能效等级(Eas): | 470 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 18 A | 最大漏极电流 (ID): | 18 A |
最大漏源导通电阻: | 0.005 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 245 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDP050AN06A0_NL | ROCHESTER |
获取价格 |
18A, 60V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN | |
FDP053N08B | FAIRCHILD |
获取价格 |
N-Channel PowerTrench® MOSFET 80V, 120A, 5.3 | |
FDP053N08B-F102 | ONSEMI |
获取价格 |
N 沟道,PowerTrench® MOSFET,80V,120A,5.3mΩ | |
FDP054N10 | FAIRCHILD |
获取价格 |
N-Channel PowerTrench® MOSFET 100V, 144A, 5.5 | |
FDP054N10 | ONSEMI |
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N 沟道,PowerTrench® MOSFET,100V,144A,5.5mΩ | |
FDP054N10_12 | FAIRCHILD |
获取价格 |
N-Channel PowerTrench® MOSFET 100V, 144A, 5. | |
FDP060AN08A0 | FAIRCHILD |
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N-Channel PowerTrench MOSFET 75V, 80A, 6.0mз | |
FDP060AN08A0 | ONSEMI |
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N 沟道,PowerTrench® MOSFET,75V,80A,6mΩ | |
FDP060AN08A0-F102 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
FDP070AN06A0 | FAIRCHILD |
获取价格 |
N-Channel PowerTrench MOSFET 60V, 80A, 7m |