Datasheet > IRFB4110

IRFB4110

更新时间： 2024-11-19 17:15:27

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
9页	836K
描述
种类:N-Channel;漏源电压（Vdss）:100V;持续漏极电流（Id）（在25°C时）:120A;Vgs(th)(V):±20;漏源导通电阻:4.5mΩ@10V

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IRFB4110 数据手册

IRFB4110

100 V N-Channel MOSFET

UMW

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

Benefits

l Improved Gate, Avalanche and Dynamic dv/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead Free

l RoHS Compliant, Halogen-Free

VDS (V) =100V

ID= 120 A

(V = 10V)

4.5m (V

=10V)

RDS(ON) ＜

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

Parameter

Max.

180

Units

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

130

120

670

P_D@T_C= 25°C

370

Maximum Power Dissipation

2.5

Linear Derating Factor

W/°C

V_GS

± 20

Gate-to-Source Voltage

5.3

Peak Diode Recovery

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

300

Soldering Temperature, for 10 seconds

(1.6mm from case)

10lb in (1.1N m)

190

Mounting torque, 6-32 or M3 screw

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b

Repetitive Avalanche Energy

E_AR

Symbol

Parameter

Junction-to-Case

Typ.

Max.

0.402

Units

R_θ

R_θCS

0.50

°C/W

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

R_θ

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7...9

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