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IRFB4103PBF PDF预览

IRFB4103PBF

更新时间: 2024-11-18 04:23:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 241K
描述
DIGITAL AUDIO MOSFET

IRFB4103PBF 数据手册

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PD - 96909  
IRFB4103PbF  
Key Parameters  
DIGITAL AUDIO MOSFET  
Features  
Key parameters optimized for Class-D audio  
amplifier applications  
VDS  
200  
139  
25  
V
m:  
nC  
nC  
R
DS(ON) typ. @ 10V  
Low RDSON for improved efficiency  
Low QG and QSW for better THD and improved  
efficiency  
Qg typ.  
Q
sw typ.  
15  
RG(int) typ.  
1.0  
175  
TJ max  
°C  
Low QRR for better THD and lower EMI  
175°C operating junction temperature for  
ruggedness  
D
S
Can deliver up to 300W per channel into 8load in  
half-bridge topology  
G
TO-220AB  
Description  
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes  
thelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Furthermore,Gatecharge,body-diode  
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance  
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction  
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,  
robust and reliable device for ClassD audio amplifier applications.  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
200  
±30  
17  
Units  
V
VDS  
VGS  
Gate-to-Source Voltage  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current c  
A
12  
68  
Power Dissipation f  
PD @TC = 25°C  
PD @TC = 100°C  
140  
71  
W
Power Dissipation f  
Linear Derating Factor  
Operating Junction and  
0.95  
W/°C  
°C  
TJ  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
10lbxin (1.1Nxm)  
Mounting torque, 6-32 or M3 screw  
Thermal Resistance  
Parameter  
Typ.  
Max.  
1.05  
–––  
62  
Units  
Junction-to-Case f  
RθJC  
RθCS  
RθJA  
–––  
0.50  
–––  
Case-to-Sink, Flat, Greased Surface  
°C/W  
Junction-to-Ambient f  
Notes  through are on page 2  
www.irf.com  
1
1/5/05  

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