PD - 96909
IRFB4103PbF
Key Parameters
DIGITAL AUDIO MOSFET
Features
• Key parameters optimized for Class-D audio
amplifier applications
VDS
200
139
25
V
m:
nC
nC
Ω
R
DS(ON) typ. @ 10V
• Low RDSON for improved efficiency
• Low QG and QSW for better THD and improved
efficiency
Qg typ.
Q
sw typ.
15
RG(int) typ.
1.0
175
TJ max
°C
• Low QRR for better THD and lower EMI
• 175°C operating junction temperature for
ruggedness
D
S
• Can deliver up to 300W per channel into 8Ω load in
half-bridge topology
G
TO-220AB
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
thelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Furthermore,Gatecharge,body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
200
±30
17
Units
V
VDS
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
A
12
68
Power Dissipation f
PD @TC = 25°C
PD @TC = 100°C
140
71
W
Power Dissipation f
Linear Derating Factor
Operating Junction and
0.95
W/°C
°C
TJ
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
10lbxin (1.1Nxm)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
1.05
–––
62
Units
Junction-to-Case f
RθJC
RθCS
RθJA
–––
0.50
–––
Case-to-Sink, Flat, Greased Surface
°C/W
Junction-to-Ambient f
Notes through ꢀare on page 2
www.irf.com
1
1/5/05