Datasheet > IRFB4110

IRFB4110

更新时间： 2024-11-19 11:15:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	345K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRFB4110 数据手册

IRFB4110PbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

V_DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

100V

3.7m

4.5m

180A

Ω

l Hard Switched and High Frequency Circuits

120A

Benefits

l Improved Gate, Avalanche and Dynamic dv/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead Free

l RoHS Compliant, Halogen-Free

TO-220AB

Gate

Drain

Source

Standard Pack

Base Part Number

Package Type

Orderable Part Number

Form

Quantity

IRFB4110PbF

TO-220

Tube

IRFB4110PbF

Absolute Maximum Ratings

Symbol

Parameter

Max.

180

130

120

670

370

2.5

Units

I_D@ T_C= 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

± 20

5.3

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

-55 to + 175

°C

Operating Junction and

T_STG

Storage Temperature Range

300

Soldering Temperature, for 10 seconds

(1.6mm from case)

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

190

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.402

–––

Units

R_θ

Junction-to-Case

R_θCS

0.50

–––

°C/W

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

R_θ

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April 28, 2014

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