Datasheet > IRFB4110PBF

IRFB4110PBF

更新时间： 2024-11-18 11:59:31

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
8页	662K
描述
HEXFETPower MOSFET

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中文翻译

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数据手册

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IRFB4110PBF 数据手册

IRFB4110PBF

Applications

^lHigh Efficiency Synchronous Rectification in SMPS

HEXFET^®Power MOSFET

V_DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

100V

^lUninterruptible Power Supply

^lHigh Speed Power Switching

^lHard Switched and High Frequency Circuits

3.7m

4.5m

180A

120A

Benefits

^lImproved Gate, Avalanche and Dynamic dv/dt

Ruggedness

^lFully Characterized Capacitance and Avalanche

SOA

^lEnhanced body diode dV/dt and dI/dt Capability

TO-220AB

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

Parameter

Max.

180

130

120

670

370

2.5

Units

I_D@ T_C= 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

± 20

5.3

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

300

Soldering Temperature, for 10 seconds

(1.6mm from case)

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

190

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.402

–––

Units

R_θ

Junction-to-Case

R_θCS

0.50

–––

°C/W

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

R_θ

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