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IRFB38N20DPBF PDF预览

IRFB38N20DPBF

更新时间: 2024-01-09 14:32:49
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
11页 276K
描述
HEXFET Power MOSFET

IRFB38N20DPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:LEAD FREE, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:3.12Is Samacsys:N
雪崩能效等级(Eas):460 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):44 A最大漏极电流 (ID):43 A
最大漏源导通电阻:0.054 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):250极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):320 W最大脉冲漏极电流 (IDM):180 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFB38N20DPBF 数据手册

 浏览型号IRFB38N20DPBF的Datasheet PDF文件第2页浏览型号IRFB38N20DPBF的Datasheet PDF文件第3页浏览型号IRFB38N20DPBF的Datasheet PDF文件第4页浏览型号IRFB38N20DPBF的Datasheet PDF文件第5页浏览型号IRFB38N20DPBF的Datasheet PDF文件第6页浏览型号IRFB38N20DPBF的Datasheet PDF文件第7页 
PD - 95620  
IRFB38N20DPbF  
IRFS38N20D  
IRFSL38N20D  
HEXFET® Power MOSFET  
SMPS MOSFET  
Applications  
l High frequency DC-DC converters  
l TO-220 is available in PbF as Lead-  
VDSS  
200V  
RDS(on) max  
ID  
44A  
0.054Ω  
Free  
Benefits  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
D2Pak  
IRFS38N20D  
TO-262  
IRFSL38N20D  
TO-220AB  
IRFB38N20DPbF  
Absolute Maximum Ratings  
Parameter  
Max.  
44  
32  
Units  
A
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
180  
PD @TA = 25°C  
PD @TC = 25°C  
Power Dissipation ‡  
3.8  
W
Power Dissipation  
320  
Linear Derating Factor  
2.1  
W/°C  
V
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
9.5  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torqe, 6-32 or M3 screw†  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
0.47  
–––  
62  
Case-to-Sink, Flat, Greased Surface †  
Junction-to-Ambient†  
0.50  
–––  
°C/W  
Junction-to-Ambient‡  
–––  
40  
Notes  through ‡ are on page 11  
www.irf.com  
1
8/10/04  

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