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IRFB4019

更新时间： 2024-11-06 14:56:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 288K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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IRFB4019 数据手册

 浏览型号IRFB4019的Datasheet PDF文件第2页浏览型号IRFB4019的Datasheet PDF文件第3页浏览型号IRFB4019的Datasheet PDF文件第4页浏览型号IRFB4019的Datasheet PDF文件第5页浏览型号IRFB4019的Datasheet PDF文件第6页浏览型号IRFB4019的Datasheet PDF文件第7页 
PD - 97075  
IRFB4019PbF  
Key Parameters  
DIGITAL AUDIO MOSFET  
Features  
• Key Parameters Optimized for Class-D Audio  
Amplifier Applications  
VDS  
150  
V
m:  
RDS(ON) typ. @ 10V  
Qg typ.  
80  
• Low RDSON for Improved Efficiency  
• Low QG and QSW for Better THD and Improved  
Efficiency  
13  
nC  
nC  
Ω
Q
sw typ.  
5.1  
2.4  
175  
RG(int) typ.  
• Low QRR for Better THD and Lower EMI  
• 175°C Operating Junction Temperature for  
Ruggedness  
TJ max  
°C  
D
S
D
• Can Deliver up to 200W per Channel into 8Ω Load in  
Half-Bridge Configuration Amplifier  
G
S
D
G
TO-220AB  
G
D
S
Gate  
Drain  
Source  
Description  
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes  
thelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Furthermore,Gatecharge,body-diode  
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance  
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction  
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,  
robust and reliable device for ClassD audio amplifier applications.  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
150  
±20  
17  
Units  
V
VDS  
VGS  
Gate-to-Source Voltage  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current c  
A
12  
51  
Power Dissipation f  
PD @TC = 25°C  
PD @TC = 100°C  
80  
W
Power Dissipation f  
40  
Linear Derating Factor  
Operating Junction and  
0.5  
W/°C  
°C  
TJ  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
10lbxin (1.1Nxm)  
Mounting torque, 6-32 or M3 screw  
Thermal Resistance  
Parameter  
Typ.  
Max.  
1.88  
–––  
62  
Units  
Junction-to-Case f  
RθJC  
RθCS  
RθJA  
–––  
0.50  
–––  
Case-to-Sink, Flat, Greased Surface  
°C/W  
Junction-to-Ambient f  
Notes  through ꢀare on page 2  
www.irf.com  
1
3/2/06  
1234567...9

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