是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | TO-220AB |
包装说明: | LEAD FREE, PLASTIC PACKAGE-3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 4.48 | 雪崩能效等级(Eas): | 73 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 43 A |
最大漏极电流 (ID): | 43 A | 最大漏源导通电阻: | 0.0158 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 250 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 71 W |
最大脉冲漏极电流 (IDM): | 170 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
IRFB38N20D | INFINEON | Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A) |
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IRFB38N20DPBF | INFINEON | HEXFET Power MOSFET |
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IRFB4019 | INFINEON | The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil |
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IRFB4019PBF | INFINEON | DIGITAL AUDIO MOSFET |
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IRFB4020 | INFINEON | The StrongIRFET™ power MOSFET family is optim |
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IRFB4020PBF | INFINEON | DIGITAL AUDIO MOSFET |
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