Datasheet > IRF280ZSPBF

IRF280ZSPBF

更新时间： 2024-11-23 07:40:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	399K
描述
Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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IRF280ZSPBF 数据手册

PD - 95488A

IRF2807ZPbF

IRF2807ZSPbF

Features

IRF2807ZLPbF

Advanced Process Technology

HEXFET^®Power MOSFET

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

V_DSS= 75V

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

R_DS(on)= 9.4mΩ

I_D= 75A

Description

ThisHEXFET^®PowerMOSFETutilizesthelatest

processing techniques to achieve extremely low

on-resistancepersiliconarea. Additionalfeatures

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating. These features

combinetomakethisdesignanextremelyefficient

and reliable device for use in a wide variety of

applications.

D²Pak

TO-262

TO-220AB

IRF2807ZPbF

IRF2807ZSPbF IRF2807ZLPbF

Absolute Maximum Ratings

Parameter

Max.

Units

@ T_C= 25°C

@ T_C= 100°C

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (See Fig. 9)

(Package Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

350

170

@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

1.1

± 20

W/°C

E_AS

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

160

200

_AS(tested)

Avalanche Current

I_AR

E_AR

See Fig.12a,12b,15,16

Repetitive Avalanche Energy

°C

Operating Junction and

-55 to + 175

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.90

–––

Units

°C/W

R_θ

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

0.50

–––

Junction-to-Ambient

–––

Junction-to-Ambient (PCB Mount, steady state)

HEXFET^®is a registered trademark of International Rectifier.

www.irf.com

07/22/10

12 3 4 5 6 7...12

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