IRF2907ZS

更新时间： 2024-11-21 22:06:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	362K
描述
AUTOMOTIVE MOSFET

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中文翻译

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数据手册
替代型号

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IRF2907ZS 数据手册

PD - 95872

IRF2907Z

AUTOMOTIVE MOSFET

IRF2907ZS

IRF2907ZL

HEXFET^®Power MOSFET

Features

Advanced Process Technology

V_DSS= 75V

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

R_DS(on)= 4.5mΩ

Repetitive Avalanche Allowed up to Tjmax

I_D= 75A

Description

SpecificallydesignedforAutomotiveapplications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistancepersiliconarea. Additionalfeatures

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitiveavalancherating. Thesefeaturescom-

bine to make this design an extremely efficient

andreliabledeviceforuseinAutomotiveapplica-

tions and a wide variety of other applications.

D²Pak

IRF2907ZS

TO-262

IRF2907ZL

TO-220AB

IRF2907Z

Absolute Maximum Ratings

Parameter

Max.

170

120

Units

@ T_C= 25°C

@ T_C= 100°C

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (See Fig. 9)

(Package Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

680

330

@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

2.2

± 20

W/°C

Gate-to-Source Voltage

E_AS

300

690

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(tested)

I_AR

See Fig.12a,12b,15,16

E_AR

°C

Repetitive Avalanche Energy

-55 to + 175

Operating Junction and

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Typ.

–––

Max.

0.45

–––

Units

°C/W

Parameter

R_θJC

Junction-to-Case

R_θCS

R_θJA

0.50

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

–––

Junction-to-Ambient (PCB Mount, steady state)

HEXFET^®is a registered trademark of International Rectifier.

www.irf.com

06/17/04

12 3 4 5 6 7...12

中文翻译

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IRF2907ZS 替代型号

型号	品牌	替代类型	描述	数据表
IRF2907ZSTRLPBF	INFINEON	功能相似	Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, M
IRF2907ZSPBF	INFINEON	功能相似	HEXFET Power MOSFET

与IRF2907ZS相关器件

型号	品牌	获取价格	描述	数据表
IRF2907ZS-7PPBF	INFINEON	获取价格	IRF2907ZS-7PPBF
IRF2907ZS-7PPBF_06	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRF2907ZS-7PPBF_15	INFINEON	获取价格	Advanced Process Technology
IRF2907ZSPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF2907ZSTRL	INFINEON	获取价格	Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, M
IRF2907ZSTRL7PP	INFINEON	获取价格	Advanced Process Technology
IRF2907ZSTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, M
IRF2907ZSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, M
IRF2907ZSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, M
IRF2N60	SUNTAC	获取价格	POWER MOSFET

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