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IRF2907ZSTRRPBF PDF预览

IRF2907ZSTRRPBF

更新时间: 2024-11-05 12:58:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 363K
描述
Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

IRF2907ZSTRRPBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:LEAD FREE, PLASTIC, D2PAK-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.1
Is Samacsys:N其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):690 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:75 V
最大漏极电流 (Abs) (ID):170 A最大漏极电流 (ID):160 A
最大漏源导通电阻:0.0045 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
最大脉冲漏极电流 (IDM):680 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:MATTE TIN OVER NICKEL端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF2907ZSTRRPBF 数据手册

 浏览型号IRF2907ZSTRRPBF的Datasheet PDF文件第2页浏览型号IRF2907ZSTRRPBF的Datasheet PDF文件第3页浏览型号IRF2907ZSTRRPBF的Datasheet PDF文件第4页浏览型号IRF2907ZSTRRPBF的Datasheet PDF文件第5页浏览型号IRF2907ZSTRRPBF的Datasheet PDF文件第6页浏览型号IRF2907ZSTRRPBF的Datasheet PDF文件第7页 
PD - 95872  
IRF2907Z  
AUTOMOTIVE MOSFET  
IRF2907ZS  
IRF2907ZL  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
Advanced Process Technology  
D
VDSS = 75V  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
‰
RDS(on) = 4.5mΩ  
G
Repetitive Avalanche Allowed up to Tjmax  
ID = 75A  
S
Description  
SpecificallydesignedforAutomotiveapplications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low  
on-resistancepersiliconarea. Additionalfeatures  
of this design are a 175°C junction operating  
temperature, fast switching speed and improved  
repetitiveavalancherating. Thesefeaturescom-  
bine to make this design an extremely efficient  
andreliabledeviceforuseinAutomotiveapplica-  
tions and a wide variety of other applications.  
D2Pak  
IRF2907ZS  
TO-262  
IRF2907ZL  
TO-220AB  
IRF2907Z  
Absolute Maximum Ratings  
Parameter  
Max.  
170  
120  
75  
Units  
A
I
I
I
I
@ TC = 25°C  
@ TC = 100°C  
@ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
D
D
D
Continuous Drain Current, VGS @ 10V (See Fig. 9)  
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
680  
330  
DM  
P
@TC = 25°C  
W
Maximum Power Dissipation  
Linear Derating Factor  
D
2.2  
± 20  
W/°C  
V
V
Gate-to-Source Voltage  
GS  
EAS  
300  
690  
mJ  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (tested)  
IAR  
See Fig.12a,12b,15,16  
A
EAR  
mJ  
°C  
Repetitive Avalanche Energy  
T
J
-55 to + 175  
Operating Junction and  
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Typ.  
–––  
Max.  
0.45  
–––  
62  
Units  
°C/W  
Parameter  
RθJC  
Junction-to-Case  
RθCS  
RθJA  
RθJA  
0.50  
–––  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
06/17/04  

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