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IRF2907ZS-7PPBF PDF预览

IRF2907ZS-7PPBF

更新时间: 2024-11-21 21:55:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
10页 664K
描述
IRF2907ZS-7PPBF

IRF2907ZS-7PPBF 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:LEAD FREE, D2PAK-7Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.63
Is Samacsys:N其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):410 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:75 V
最大漏极电流 (Abs) (ID):180 A最大漏极电流 (ID):160 A
最大漏源导通电阻:0.0038 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W最大脉冲漏极电流 (IDM):700 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF2907ZS-7PPBF 数据手册

 浏览型号IRF2907ZS-7PPBF的Datasheet PDF文件第2页浏览型号IRF2907ZS-7PPBF的Datasheet PDF文件第3页浏览型号IRF2907ZS-7PPBF的Datasheet PDF文件第4页浏览型号IRF2907ZS-7PPBF的Datasheet PDF文件第5页浏览型号IRF2907ZS-7PPBF的Datasheet PDF文件第6页浏览型号IRF2907ZS-7PPBF的Datasheet PDF文件第7页 
PD - 97031  
IRF2907ZS-7PPbF  
Features  
HEXFET® Power MOSFET  
l
l
l
l
l
Advanced Process Technology  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
D
VDSS = 75V  
Repetitive Avalanche Allowed up to Tjmax  
‰
RDS(on) = 3.8mΩ  
G
S
Description  
ID = 160A  
S (Pin 2, 3, 5, 6, 7)  
G (Pin 1)  
Specificallydesignedforhighcurrent,highreliabil-  
ity applications, this HEXFET® Power MOSFET  
utilizes the latest processing techniques and ad-  
vancedpackagingtechnologytoachieveextremely  
lowon-resistanceandworld-classcurrentratings.  
Additional features of this design are a 175°C  
junctionoperatingtemperature,fastswitchingspeed  
and improved repetitive avalanche rating . These  
featurescombinetomakethisdesignanextremely  
efficient and reliable device for use in Server &  
TelecomOR'ing,AutomotiveandlowvoltageMotor  
Drive Applications.  
Absolute Maximum Ratings  
Parameter  
Max.  
180  
120  
160  
700  
300  
Units  
A
I
I
I
I
@ TC = 25°C  
@ TC = 100°C  
@ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
D
D
D
Continuous Drain Current, VGS @ 10V (See Fig. 9)  
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
DM  
P
@TC = 25°C  
W
Maximum Power Dissipation  
Linear Derating Factor  
D
2.0  
± 20  
W/°C  
V
V
Gate-to-Source Voltage  
GS  
EAS  
160  
410  
mJ  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
E
AS (tested)  
IAR  
EAR  
See Fig.12a,12b,15,16  
A
mJ  
°C  
Repetitive Avalanche Energy  
T
J
-55 to + 175  
Operating Junction and  
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.50  
–––  
62  
Units  
°C/W  
RθJC  
Junction-to-Case  
RθCS  
RθJA  
RθJA  
0.50  
–––  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
08/03/05  

IRF2907ZS-7PPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFS3107-7PPBF INFINEON

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