是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | LEAD FREE, D2PAK-7 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.63 |
Is Samacsys: | N | 其他特性: | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
雪崩能效等级(Eas): | 410 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 75 V |
最大漏极电流 (Abs) (ID): | 180 A | 最大漏极电流 (ID): | 160 A |
最大漏源导通电阻: | 0.0038 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G6 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 300 W | 最大脉冲漏极电流 (IDM): | 700 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRFS3107-7PPBF | INFINEON |
类似代替 |
HEXFET Power MOSFET |
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IRF2907ZS-7PPBF_06 | INFINEON |
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HEXFET㈢ Power MOSFET | |
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Advanced Process Technology | |
IRF2907ZSPBF | INFINEON |
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IRF2907ZSTRL | INFINEON |
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IRF2907ZSTRL7PP | INFINEON |
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IRF2907ZSTRLPBF | INFINEON |
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Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, M | |
IRF2907ZSTRR | INFINEON |
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Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, M | |
IRF2907ZSTRRPBF | INFINEON |
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Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, M | |
IRF2N60 | SUNTAC |
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IRF2N60-126 | SUNTAC |
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