是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | LEAD FREE, D2PAK-7/6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 7.67 |
Samacsys Confidence: | 4 | Samacsys Status: | Released |
Samacsys PartID: | 896991 | Samacsys Pin Count: | 7 |
Samacsys Part Category: | MOSFET (N-Channel) | Samacsys Package Category: | Other |
Samacsys Footprint Name: | PG-TO263-7-3 | Samacsys Released Date: | 2019-12-03 23:06:36 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 320 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 75 V | 最大漏极电流 (Abs) (ID): | 260 A |
最大漏极电流 (ID): | 240 A | 最大漏源导通电阻: | 0.0026 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263CB |
JESD-30 代码: | R-PSSO-G6 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 370 W |
最大脉冲漏极电流 (IDM): | 1060 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IPB030N08N3GATMA1 | INFINEON |
类似代替 |
Power Field-Effect Transistor, 160A I(D), 80V, 0.003ohm, 1-Element, N-Channel, Silicon, Me | |
IRF2907ZS-7PPBF | INFINEON |
类似代替 |
IRF2907ZS-7PPBF |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFS3107PBF | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRFS3107TRLPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Me | |
IRFS3107TRRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Me | |
IRFS31N20D | INFINEON |
获取价格 |
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) | |
IRFS31N20DHR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Me | |
IRFS31N20DPBF | INFINEON |
获取价格 |
HEXFET Power MOSFET ( VDSS = 200V , RDS(on)ma | |
IRFS31N20DTRL | INFINEON |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB | |
IRFS31N20DTRLP | INFINEON |
获取价格 |
Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Me | |
IRFS31N20DTRR | INFINEON |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB | |
IRFS31N20DTRRP | INFINEON |
获取价格 |
Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Me |