Datasheet > IRFS3207Z

IRFS3207Z

更新时间： 2023-09-03 20:35:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	491K
描述
75V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

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中文翻译

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数据手册

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IRFS3207Z 数据手册

IRFB3207ZPbF

IRFS3207ZPbF

IRFSL3207ZPbF

HEXFET^®Power MOSFET

Applications

ꢀ High Efficiency Synchronous Rectification in

V_DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

75V

SMPS

3.3mΩ

4.1mΩ

170Aꢁ

120A

ꢀ Uninterruptible Power Supply

ꢀ High Speed Power Switching

ꢀ Hard Switched and High Frequency Circuits

Benefits

ꢀ Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

ꢀ Fully Characterized Capacitance and

Avalanche SOA

ꢀ Enhanced body diode dV/dt and dI/dt

Capability

ꢀ Lead-Free

ꢀ RoHSCompliant,Halogen-Free

D²Pak

TO-262

TO-220AB

IRFB3207ZPbF

IRFS3207ZPbF

IRFSL3207ZPbF

Gate

Drain

Source

Standard Pack

Base Part Number

Package Type

Orderable Part Number

Form

Quantity

IRFB3207ZPbF

IRFSL3207ZPbF

TO-220

TO-262

Tube

IRFB3207ZPbF

Tube

IRFSL3207ZPbF

IRFS3207ZPbF

D2Pak

Tape and Reel Left

Tape and Reel Right

800

IRFS3207ZTRLPbF

IRFS3207ZTRRPbF

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

170

ꢁ

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

120

ꢁ

120

670

300

Pulsed Drain Current

ꢂ

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

2.0

W/°C

± 20

V_GS

Gate-to-Source Voltage

Peak Diode Recovery

ꢃ

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lb in (1.1N m)

ꢈ

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy

ꢄ

170

See Fig. 14, 15, 22a, 22b

Avalanche Current

ꢂ

I_AR

Repetitive Avalanche Energy

ꢅ

E_AR

Thermal Resistance

Symbol

Parameter

Junction-to-Case ꢆ

Typ.

–––

Max.

0.50

–––

Units

R_θ

Case-to-Sink, Flat Greased Surface , TO-220

0.50

°C/W

R_θ

Junction-to-Ambient, TO-220

Junction-to-Ambient (PCB Mount) , D²Pak

–––

ꢆ

R_θ

ꢇꢆ

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August 18, 2015

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中文翻译

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与IRFS3207Z相关器件

型号	品牌	获取价格	描述	数据表
IRFS3207ZPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFS3207ZTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, M
IRFS3207ZTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, M
IRFS3306	INFINEON	获取价格	60V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装
IRFS3306PBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFS3306TRLPBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFS3307	INFINEON	获取价格	HEXFET Power MOSFET
IRFS3307_06	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply
IRFS3307PBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFS3307TRL	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 75V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me

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