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IRFS3207TRLPBF PDF预览

IRFS3207TRLPBF

更新时间: 2024-01-22 17:52:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 376K
描述
Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

IRFS3207TRLPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:D2PAK
包装说明:LEAD FREE, PLASTIC, D2PAK-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.07雪崩能效等级(Eas):910 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:75 V最大漏极电流 (Abs) (ID):170 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.0045 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W最大脉冲漏极电流 (IDM):720 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:MATTE TIN OVER NICKEL
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFS3207TRLPBF 数据手册

 浏览型号IRFS3207TRLPBF的Datasheet PDF文件第2页浏览型号IRFS3207TRLPBF的Datasheet PDF文件第3页浏览型号IRFS3207TRLPBF的Datasheet PDF文件第4页浏览型号IRFS3207TRLPBF的Datasheet PDF文件第5页浏览型号IRFS3207TRLPBF的Datasheet PDF文件第6页浏览型号IRFS3207TRLPBF的Datasheet PDF文件第7页 
PD - 96893C  
IRFB3207  
IRFS3207  
IRFSL3207  
Applications  
HEXFET® Power MOSFET  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
D
VDSS  
75V  
3.6m  
RDS(on) typ.  
l Hard Switched and High Frequency Circuits  
G
4.5m  
180A  
max.  
Benefits  
l Worldwide Best RDS(on) in TO-220  
l Improved Gate, Avalanche and Dynamic dV/dt  
Ruggedness  
S
ID  
l Fully Characterized Capacitance and Avalanche  
SOA  
l Enhanced body diode dV/dt and dI/dt Capability  
G D S  
G D S  
G D S  
D2Pak  
IRFS3207  
TO-262  
IRFSL3207  
TO-220AB  
IRFB3207  
Absolute Maximum Ratings  
Symbol  
ID @ TC = 25°C  
Parameter  
Continuous Drain Current, VGS @ 10V  
Max.  
180  
Units  
A
Continuous Drain Current, VGS @ 10V  
130  
ID @ TC = 100°C  
IDM  
720  
330  
Pulsed Drain Current  
PD @TC = 25°C  
Maximum Power Dissipation  
Linear Derating Factor  
W
2.2  
W/°C  
V
± 20  
VGS  
Gate-to-Source Voltage  
5.8  
Peak Diode Recovery  
dV/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
10lb in (1.1N m)  
Mounting torque, 6-32 or M3 screw  
Avalanche Characteristics  
Single Pulse Avalanche Energy  
EAS (Thermally limited)  
910  
mJ  
A
Avalanche Current  
IAR  
See Fig. 14, 15, 16a, 16b,  
Repetitive Avalanche Energy  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.45  
–––  
62  
Units  
Rθ  
Rθ  
Rθ  
Rθ  
Junction-to-Case  
JC  
CS  
JA  
JA  
Case-to-Sink, Flat Greased Surface , TO-220  
0.50  
–––  
°C/W  
Junction-to-Ambient, TO-220  
Junction-to-Ambient (PCB Mount) , D2Pak  
–––  
40  
www.irf.com  
1
03/06/06  

IRFS3207TRLPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFS3207PBF INFINEON

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