Datasheet > IRFS3306

IRFS3306

更新时间： 2024-10-03 11:13:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	328K
描述
60V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFS3306 数据手册

IRFB3306PbF

IRFS3306PbF

IRFSL3306PbF

HEXFET^®Power MOSFET

60V

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

V_DSS

R_DS(on)typ.

3.3m

4.2m

160A

max.

l Hard Switched and High Frequency Circuits

I_D

(Silicon Limited)

Benefits

I_{D (Package Limited)}

120A

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

l RoHSCompliant,Halogen-Free

D²Pak

TO-262

TO-220AB

IRFS3306PbF

IRFSL3306PbF

IRFB3306PbF

Gate

Drain

Source

Standard Pack

Base Part Number

Package Type

Orderable Part Number

Form

Quantity

IRFB3306PbF

IRFSL3306PbF

TO-220

TO-262

Tube

IRFB3306PbF

Tube

IRFSL3306PbF

IRFS3306PbF

D2Pak

Tape and Reel Left

Tape and Reel Right

800

IRFS3306TRLPbF

IRFS3306TRRPbF

Absolute Maximum Ratings

Symbol

Parameter

Max.

160

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current

110

120

620

230

P_D@T_C= 25°C

Maximum Power Dissipation

1.5

Linear Derating Factor

W/°C

± 20

V_GS

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

°C

300

Soldering Temperature, for 10 seconds

(1.6mm from case)

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

184

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Junction-to-Case

Typ.

Max.

0.65

–––

Units

R_θ

–––

0.50

–––

R_θ

Case-to-Sink, Flat Greased Surface , TO-220

Junction-to-Ambient, TO-220

Junction-to-Ambient (PCB Mount) , D²Pak

°C/W

R_θ

Submit Datasheet Feedback

April 24, 2014

12 3 4 5 6 7...13

中文翻译

下载PDF

与IRFS3306相关器件

型号	品牌	获取价格	描述	数据表
IRFS3306PBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFS3306TRLPBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFS3307	INFINEON	获取价格	HEXFET Power MOSFET
IRFS3307_06	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply
IRFS3307PBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFS3307TRL	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 75V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
IRFS3307TRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 75V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
IRFS3307TRR	INFINEON	获取价格	暂无描述
IRFS3307TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 75V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
IRFS3307Z	INFINEON	获取价格	75V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

与IRFS3306相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

38
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

32
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

29
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

40

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFS3306

IRFS3306 数据手册

与IRFS3306相关器件

与IRFS3306相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFS3306

IRFS3306 数据手册

与IRFS3306相关器件

与IRFS3306相关文章

您还可以找

您在本页遇到什么问题？