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IRFS33N15DPBF PDF预览

IRFS33N15DPBF

更新时间: 2024-10-02 04:23:19
品牌 Logo 应用领域
英飞凌 - INFINEON 开关
页数 文件大小 规格书
12页 281K
描述
SMPS MOSFET HEXFET Power MOSFET

IRFS33N15DPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.7Is Samacsys:N
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

IRFS33N15DPBF 数据手册

 浏览型号IRFS33N15DPBF的Datasheet PDF文件第2页浏览型号IRFS33N15DPBF的Datasheet PDF文件第3页浏览型号IRFS33N15DPBF的Datasheet PDF文件第4页浏览型号IRFS33N15DPBF的Datasheet PDF文件第5页浏览型号IRFS33N15DPBF的Datasheet PDF文件第6页浏览型号IRFS33N15DPBF的Datasheet PDF文件第7页 
PD- 95537  
IRFB33N15DPbF  
IRFS33N15DPbF  
IRFSL33N15DPbF  
HEXFET® Power MOSFET  
SMPS MOSFET  
Applications  
l High frequency DC-DC converters  
l Lead-Free  
VDSS  
150V  
RDS(on) max  
ID  
33A  
0.056Ω  
Benefits  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
D2Pak  
TO-262  
TO-220AB  
IRFB33N15D  
IRFS33N15D  
IRFSL33N15D  
Absolute Maximum Ratings  
Parameter  
Max.  
33  
24  
Units  
A
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
130  
PD @TA = 25°C  
PD @TC = 25°C  
Power Dissipation ‡  
3.8  
W
Power Dissipation  
170  
Linear Derating Factor  
1.1  
W/°C  
V
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
4.4  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torqe, 6-32 or M3 screw†  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Typical SMPS Topologies  
l Telecom 48V input Active Clamp Forward Converter  
Notes  through ‡ are on page 11  
www.irf.com  
1
7/21/04  

IRFS33N15DPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFS33N15D INFINEON

功能相似

Power MOSFET(Vdss=150V, Rds(on)max=0.056ohm, Id=33A)

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