Datasheet > IRFS3806PBF

IRFS3806PBF

更新时间： 2024-01-01 14:49:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	565K
描述
HEXFETPower MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRFS3806PBF 数据手册

PD - 97310

IRFB3806PbF

IRFS3806PbF

Applications

IRFSL3806PbF

HEXFET^®Power MOSFET

60V

l High Efficiency Synchronous Rectification in

SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

V_DSS

R_DS(on)typ.

max.

12.6m

15.8m

43A

Ω

Benefits

I_D

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche SOA

l Enhanced body diode dV/dt and dI/dt

Capability

D²Pak

TO-262

TO-220AB

IRFB3806PbF

IRFS3806PbF

IRFSL3806PbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

Parameter

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current c

Max.

Units

I_D@ T_C= 100°C

I_DM

170

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

0.47

W/°C

V_GS

Gate-to-Source Voltage

Peak Diode Recovery e

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy d

E_{AS (Thermally limited)}

Avalanche Current c

I_AR

Repetitive Avalanche Energy f

E_AR

7.1

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

R_θJC

–––

0.50

–––

Junction-to-Case j

2.12

–––

R_θCS

R_θJA

°C/W

Case-to-Sink, Flat Greased Surface, TO-220

Junction-to-Ambient, TO-220 ij

Junction-to-Ambient (PCB Mount) , D²Pak ij

www.irf.com

02/29/08

12 3 4 5 6 7...11

中文翻译

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IRFS3806PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFS3806TRLPBF	INFINEON	类似代替	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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