Datasheet > 晶体管 > 功率场效应晶体管> IRFS38N20DTRR

IRFS38N20DTRR

更新时间： 2024-02-07 21:21:50

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
11页	135K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 44A I(D) \| TO-263AB

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中文翻译

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数据手册

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IRFS38N20DTRR 数据手册

PD - 94358

IRFB38N20D

IRFS38N20D

SMPS MOSFET

IRFSL38N20D

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSS

200V

R_DS(on)max

I_D

44A

0.054Ω

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D²Pak

TO-262

TO-220AB

IRFB38N20D

IRFS38N20D

IRFSL38N20D

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

180

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.8

Power Dissipation

320

Linear Derating Factor

2.1

W/°C

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

9.5

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.47

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

Junction-to-Ambient

–––

Notes through are on page 11

www.irf.com

12/12/01

12 3 4 5 6 7...11

中文翻译

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