Datasheet > IRFS41N15TRLDPBF

IRFS41N15TRLDPBF

更新时间： 2024-09-11 05:59:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	720K
描述
Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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IRFS41N15TRLDPBF 数据手册

PD-95145

IRFB41N15DPbF

IRFIB41N15DPbF

IRFS41N15DPbF

IRFSL41N15DPbF

Applications

HEXFET^®Power MOSFET

l HighfrequencyDC-DCconverters

l Lead-Free

V_DSSR_DS(on)max

I_D

Benefits

0.045Ω

150V

41A

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

TO-220AB

IRFB41N15D

D²Pak

TO-262

TO-220 FullPak

IRFIB41N15D

IRFS41N15D IRFSL41N15D

Absolute Maximum Ratings

Parameter

Continuous Drain Current, V_GS@ 10V

Max.

Units

@ T = 25°C

@ T = 100°C

Continuous Drain Current, V_GS@ 10V

164

3.1

200

Pulsed Drain Current

Power Dissipation, D²Pak

Power Dissipation, TO-220

Power Dissipation, Fullpak

Linear Derating Factor, TO-220

Linear Derating Factor, Fullpak

Gate-to-Source Voltage

@T = 25°C

1.3

W/°C

0.32

± 30

Peak Diode Recovery dv/dt

dv/dt

2.7

V/ns

-55 to + 175

Operating Junction and

°C

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

1.1(10)

N•m (lbf•in)

Thermal Resistance

Parameter

Typ.

–––

0.50

–––

Max.

0.75

3.14

–––

Units

°C/W

R_θJC

Junction-to-Case

R_θJC

R_θcs

R_θJA

Junction-to-Case, Fullpak

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, TO-220

Junction-to-Ambient, D²Pak

Junction-to-Ambient, Fullpak

Notes through are on page 12

www.irf.com

04/22/04

12 3 4 5 6 7...12

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